Interface losses at metal/organic interface is a critical issue in organic electronic devices. The interfacial layers play a significant role in enhancing the device performance and the interfacial material design criteria are ongoing challenges to be faced in optimization the device performance. In this work, a simple Phenanthroline derivative Phen-I was synthesized through a quaternization reaction in a high yield without complicated purification process. Besides its good wettability and compatibility of the contact between metal electrode and organic layer, interestingly, Phen-I displays a dual functional property, i.e., it not only lowers the work function of the metallic cathode to increase electron extraction but also can be doped into electron transporting material to enhance the conductivity. The inverted perovskite solar cells (PSCs) with Phen-I as cathode interlayer (CIL) show superior performance both in power conversion efficiency, with a maximum PCE of 18.13%, and devices stability as compared with the control devices. Encouragingly, the best PCE of 19.27% was obtained when the perovskite layer based on FA_0.3MA_0.7PbI_2.7Cl_0.3 perovskite system. Meanwhile, the devices with Phen-I as CIL show low J-V hysteresis during the forward and reverse bias sweeping. Subsequent studies demonstrate that the performance of the inverted PSCs also improves to 15.25% using 5% Phen-I:PC₆₁BM as electron transporting layer (ETL). Herein, the interface between the metal electrode and ETL is carefully investigated using a series of electrical and surface potential techniques. These results demonstrate that Phen-I is a dual-functional interlayer material to reduce interface losses, which, highlights the broad promise of this new class of materials for applications in organic electronic devices. Meanwhile, owing to the simple molecular structure, low-cost and solution processible, these intriguing features render Phen-I more suitable for efficient organic electronics in large area printing process.

金属/有机界面处的界面损耗是有机电子设备中的关键问题。界面层在增强器件性能方面起着重要作用，并且界面材料设计标准是优化器件性能时将面临的持续挑战。在这项工作中，通过季铵化反应以高收率合成了简单的菲咯啉衍生物Phen-I，而无需复杂的纯化过程。有趣的是，Phen-I除了具有良好的润湿性和金属电极与有机层之间接触的相容性外，还具有双重功能，即，它不仅降低了金属阴极的功函数以增加电子提取，而且可以掺杂到金属中。电子传输材料，以增强导电性。与控制装置相比，以Phen-1作为阴极夹层（CIL）的倒钙钛矿太阳能电池（PSC）在功率转换效率（最大PCE为18.13％）和装置稳定性方面均表现出卓越的性能。令人鼓舞的是，基于FA的钙钛矿层获得了19.27％的最佳PCE_0.3 MA _0.7 PbI _2.7 Cl _0.3钙钛矿体系。同时，以Phen-I作为CIL的器件在正向和反向偏置扫描期间表现出较低的JV滞后现象。随后的研究表明，使用5％Phen-I：PC ₆₁，倒置的PSC的性能也可提高到15.25％。BM作为电子传输层（ETL）。在此，使用一系列电势和表面电势技术仔细研究了金属电极和ETL之间的界面。这些结果表明，Phen-I是一种可降低界面损耗的双功能中间层材料，这突显了这种新型材料在有机电子设备中的广泛应用前景。同时，由于分子结构简单，成本低廉且易于加工，这些引人入胜的特性使Phen-I更适用于大面积印刷过程中的高效有机电子产品。