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LEDs: High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer (Adv. Funct. Mater. 42/2017)
Advanced Functional Materials ( IF 19.0 ) Pub Date : 2017-11-08 , DOI: 10.1002/adfm.201770253
Fan Cao 1 , Haoran Wang 1 , Piaoyang Shen 1 , Xiaomin Li 1 , Yanqiong Zheng 1 , Yuequn Shang 2 , Jianhua Zhang 1 , Zhijun Ning 2 , Xuyong Yang 1
Affiliation  

A Cu‐doped, NiO‐based quantum dot light‐emitting diode (QLED) reported by Xuyong Yang and co‐workers in article number 1704278 exhibits a significant operating lifetime enhancement compared with organic PEDOT:PSS‐based QLEDs. Relying on an inorganic hole transport layer, the device's quantum dots retain their brightness for an extended time period. This is in contrast to light from a PEDOT:PSS‐based QLED shown in the upper‐left corner of the image.
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中文翻译:

LED:通过溶液处理的金属掺杂的氧化镍空穴注入界面层实现的高效且稳定的量子点发光二极管(Adv。Funct。Mater。42/2017)

杨旭永及其同事在文章编号1704278中报道的一种基于Cu的,基于NiO的量子点发光二极管(QLED)与基于有机PEDOT:PSS的QLED相比,具有显着的使用寿命延长。依靠无机空穴传输层,该器件的量子点可在较长时间内保持其亮度。这与图像左上角显示的基于PEDOT:PSS的QLED发出的光形成对比。
图像
更新日期:2017-11-08
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