A universal method to obtain record‐high electronic Seebeck coefficients is demonstrated while preserving reasonable conductivities in doped blends of organic semiconductors through rational design of the density of states (DOSs). A polymer semiconductor with a shallow highest occupied molecular orbital (HOMO) level‐poly(3‐hexylthiophene) (P3HT) is mixed with materials with a deeper HOMO (PTB7, TQ1) to form binary blends of the type P3HT_x:B_1‐x (0 ≤ x ≤ 1) that is p‐type doped by F₄TCNQ. For B = PTB7, a Seebeck coefficient S = 1100 µV K⁻¹ with conductivity σ = 0.3 S m⁻¹ at x = 0.10 is achieved, while for B = TQ1, S = 2000 µV K⁻¹ and σ = 0.03 S m⁻¹ at x = 0.05 is found. Kinetic Monte Carlo simulations with parameters based on experiments show good agreement with the experimental results, confirming the intended mechanism. The simulations are used to derive a design rule for parameter tuning. These results can become relevant for low‐power, low‐cost applications like (providing power to) autonomous sensors, in which a high Seebeck coefficient translates directly to a proportionally reduced number of legs in the thermogenerator, and hence in reduced fabrication cost and complexity.

中文翻译：

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共轭聚合物混合物中的高塞贝克系数

通过合理设计态密度（DOS），在保持有机半导体掺杂共混物的合理电导率的同时，展示了一种获得创纪录的高电子Seebeck系数的通用方法。将具有最浅最高占据分子轨道（HOMO）能级的聚合物半导体-聚（3-己基噻吩）（P3HT）与具有更深HOMO（PTB7，TQ1）的材料混合以形成P3HT _x：B _1-类型的二元共混物_X（0≤ X ≤1）即p型被F掺杂₄ TCNQ。对于乙= PTB7，塞贝克系数小号= 1100μVķ ^-1与电导率σ= 0.3 S M ^-1在X= 0.10，而对于B = TQ1，S = 2000 µV K ^-1和σ= 0.03在x = 0.05时发现S m ^-1。基于实验的动力学蒙特卡洛模拟结果与实验结果吻合良好，证实了预期的机理。仿真用于得出参数调整的设计规则。这些结果可能与低功率，低成本应用（例如向自主传感器提供能量）相关，在该传感器中，高塞贝克系数直接转化为成比例减少的热发生器支脚数量，从而降低了制造成本和复杂性。