We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

中文翻译：

---

用于接触纳米精密施主器件的全光刻工艺

我们描述了一种全光学光刻工艺，该工艺可以使用扫描隧道显微镜 (STM) 与在硅中制造的纳米精度供体器件进行电接触。这是通过在 STM 中实施清洁程序来实现的，该程序允许在晶片级集成金属对准标记和离子注入触点。图案化设备的低温传输测量确定了该过程的可行性。