B₁₂P₂ was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [112̅0] and a custom miscut 4° toward the [11̅00]. Epitaxy on substrates miscut to the [112̅0] resulted in highly twinned B₁₂P₂ films with a rotational twin density of approximately 70% twin orientation I and 30% twin orientation II. In contrast, epitaxy on substrates tilted toward the [11̅00] produced films of >99% twin orientation I. A H₂ etch model is used to explain the 4H-SiC surface morphology for each miscut prior to epitaxy and demonstrate how the surface steps influence the nucleation of B₁₂P₂ twin orientations. Surface steps on substrates miscut to the [112̅0] tend to be zig-zagged with steps rotated 60° from one another producing B₁₂P₂ crystals that nucleate in orientations rotated by 60°, hence forming rotationally twinned films. Steps on substrates tilted to the [11̅00] tend to be parallel resulting in crystallographically aligned B₁₂P₂ nucleation.

中文翻译：

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4H-SiC在外延B ₁₂ P ₂中旋转孪晶的抑制

B ₁₂ P ₂使用两种不同的基片切割方法在（0001）4H-SiC上外延生长：标准的4°切割向[112̅0]方向和常规的4°切割向[11̅00]方向切割。衬底上的外延被错误地切割为[112̅0]，导致高度孪生的B ₁₂ P ₂薄膜具有大约70％的孪生取向I和30％的孪生取向II的旋转孪生密度。与此相反，在基片上外延朝向[1100]产生> 99％的双取向I的AH膜倾斜₂蚀刻模型被用于现有解释为每个斜切的4H-SiC表面形态的外延和演示表面台阶如何影响B ₁₂ P _2的成核孪生取向。被错切到[112 steps0]的基板上的表面台阶往往会被彼此旋转60°的台阶锯齿形，从而产生B ₁₂ P ₂晶体，它们以旋转60°的方向成核，从而形成旋转孪晶膜。倾斜到[11̅00]的基板上的台阶往往是平行的，从而导致晶体学上对准的B ₁₂ P ₂成核作用。