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Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures
Applied Physics Letters ( IF 4 ) Pub Date : 2017-10-30 , DOI: 10.1063/1.4993853
K. Ding 1 , M. B. Ullah 1 , V. Avrutin 1 , Ü. Özgür 1 , H. Morkoç 1
Affiliation  

Zn-polar BeMgZnO/ZnO heterostructures grown by molecular beam epitaxy on high resistivity GaN templates producing high-density two-dimensional electron gas (2DEG) are investigated. This is motivated by the need to reach plasmon-longitudinal optical (LO) phonon resonance for attaining minimum LO phonon lifetime. Achievement of high 2DEG concentration in MgZnO/ZnO heterostructures requires growth of the MgZnO barrier at relatively low temperatures, which compromises the ternary quality that in turn hinders potential field effect transistor performance. When this ternary is alloyed further with BeO, the sign of strain in the BeMgZnO barrier on ZnO switches from compressive to tensile, making the piezoelectric and spontaneous polarizations to be additive in the BeMgZnO/ZnO heterostructures much like the Ga-polar AlGaN/GaN heterostructures. As a result, a 2DEG concentration of 1.2 × 1013 cm−2 is achieved in the Be0.03Mg0.41Zn0.56O/ZnO heterostructure. For comparison, a 2DEG concentration of 7.7 × 1012 cm−2 req...

中文翻译:

Zn极性BeMgZnO/ZnO异质结构中高密度二维电子气的研究

研究了通过分子束外延在高电阻率 GaN 模板上生长的 Zn 极性 BeMgZnO/ZnO 异质结构,产生高密度二维电子气 (2DEG)。这是由于需要达到等离子体纵向光学 (LO) 声子共振以获得最小 LO 声子寿命。在 MgZnO/ZnO 异质结构中实现高 2DEG 浓度需要在相对较低的温度下生长 MgZnO 势垒,这会损害三元质量,进而阻碍潜在的场效应晶体管性能。当该三元与 BeO 进一步合金化时,ZnO 上的 BeMgZnO 势垒中的应变符号从压缩转换为拉伸,使得压电和自发极化在 BeMgZnO/ZnO 异质结构中相加,很像 Ga 极性 AlGaN/GaN 异质结构. 因此,在 Be0.03Mg0.41Zn0.56O/ZnO 异质结构中实现了 1.2 × 1013 cm-2 的 2DEG 浓度。为了比较,7.7 × 1012 cm−2 的 2DEG 浓度需要...
更新日期:2017-10-30
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