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1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K
Applied Physics Letters ( IF 4 ) Pub Date : 2017-10-30 , DOI: 10.1063/1.5010049
Yongzhou Xue 1, 2 , Zesheng Chen 1 , Haiqiao Ni 1 , Zhichuan Niu 1 , Desheng Jiang 1 , Xiuming Dou 1, 2 , Baoquan Sun 1, 2
Affiliation  

We report on 1.3 μm single-photon emission based on a self-assembled strain-coupled bilayer of InAs quantum dots (QDs) embedded in a micropillar Bragg cavity at temperature of liquid nitrogen or even as high as 120 K. The obtained single-photon flux into the first lens of the collection optics is 4.2 × 106 and 3.3 × 106/s at 82 and 120 K, respectively, corresponding to a second-order correlation function at zero delay times of 0.27(2) and 0.28(3). This work reports on the significant effect of the micropillar cavity-related enhancement of QD emission and demonstrates an opportunity to employ telecom band single-photon emitters at liquid nitrogen or even higher temperature.

中文翻译:

在高达 120 K 的温度下,来自 InAs/GaAs 量子点的应变耦合双层的 1.3 μm 单光子发射

我们报告了基于自组装应变耦合双层 InAs 量子点 (QD) 的 1.3 μm 单光子发射,该双层嵌入在液氮温度甚至高达 120 K 的微柱布拉格腔中。获得的单光子在 82 K 和 120 K 时,进入收集光学器件第一透镜的通量分别为 4.2 × 106 和 3.3 × 106/s,对应于零延迟时间为 0.27(2) 和 0.28(3) 的二阶相关函数。这项工作报告了与微柱腔相关的 QD 发射增强的显着影响,并展示了在液氮甚至更高温度下使用电信波段单光子发射器的机会。
更新日期:2017-10-30
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