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Dynamics of direct X-ray detection processes in high-Z Bi2O3 nanoparticles-loaded PFO polymer-based diodes
Applied Physics Letters ( IF 4 ) Pub Date : 2017-10-30 , DOI: 10.1063/1.4986345
A. Ciavatti 1 , T. Cramer 1 , M. Carroli 1 , L. Basiricò 1 , R. Fuhrer 2 , D. M. De Leeuw 3 , B. Fraboni 1
Affiliation  

Semiconducting polymer based X-ray detectors doped with high-Z nanoparticles hold the promise to combine mechanical flexibility and large-area processing with a high X-ray stopping power and sensitivity. Currently, a lack of understanding of how nanoparticle doping impacts the detector dynamics impedes the optimization of such detectors. Here, we study direct X-ray radiation detectors based on the semiconducting polymer poly(9,9-dioctyfluorene) blended with Bismuth(III)oxide (Bi2O3) nanoparticles (NPs). Pure polymer diodes show a high mobility of 1.3 × 10−5 cm2/V s, a low leakage current of 200 nA/cm2 at −80 V, and a high rectifying factor up to 3 × 105 that allow us to compare the X-ray response of a polymer detector in charge-injection conditions (forward bias) and in charge-collection conditions (reverse bias), together with the impact of NP-loading in the two operation regimes. When operated in reverse bias, the detectors reach the state of the art sensitivity of 24 μC/Gy cm2, providing a fast photore...

中文翻译:

高 Z Bi2O3 纳米粒子负载 PFO 聚合物基二极管中直接 X 射线检测过程的动力学

掺杂高 Z 纳米粒子的基于半导体聚合物的 X 射线探测器有望将机械灵活性和大面积处理与高 X 射线阻止能力和灵敏度相结合。目前,对纳米粒子掺杂如何影响探测器动力学缺乏了解阻碍了此类探测器的优化。在这里,我们研究了基于半导体聚合物聚(9,9-二辛基芴)与氧化铋(Bi2O3)纳米颗粒(NP)混合的直接 X 射线辐射探测器。纯聚合物二极管显示出 1.3 × 10−5 cm2/V s 的高迁移率、−80 V 下 200 nA/cm2 的低漏电流以及高达 3 × 105 的高整流因子,这使我们能够比较 X-聚合物探测器在电荷注入条件(正向偏置)和电荷收集条件(反向偏置)下的射线响应,以及 NP 加载在两种运行方式中的影响。当在反向偏压下工作时,探测器达到最先进的灵敏度 24 μC/Gy cm2,提供快速光阻...
更新日期:2017-10-30
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