The threshold switching mechanism of Te–SbO thin films with a unique microstructure in which a Te nanocluster is present in the SbO matrix is analyzed. During the electro-forming process, amorphous Te filaments are formed in the Te nanocluster. However, unlike conventional Ovonic threshold switching (TS) selector devices, it has been demonstrated that the off-current flows along the filament. Numerical calculations show that the off-current is due to the trap present in the filament. We also observed changes in TS parameters through controls in the strength or volume of the filaments.

中文翻译：

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用于交叉点非易失性存储器应用的 Te-SbO 选择器器件的阈值切换机制分析

分析了具有独特微结构的 Te-SbO 薄膜的阈值转换机制，其中 Te 纳米团簇存在于 SbO 基体中。在电铸过程中，Te 纳米团簇中形成无定形 Te 细丝。然而，与传统的 Ovonic 阈值开关 (TS) 选择器设备不同，已经证明关断电流沿灯丝流动。数值计算表明，截止电流是由于灯丝中存在的陷阱造成的。我们还通过控制长丝的强度或体积观察了 TS 参数的变化。