Monolayer graphene is used as an electrode to develop novel electronic device architectures that exploit the unique, atomically thin structure of the material with a low density of states at its charge neutrality point. For example, a single semiconductor layer stacked onto graphene can provide a semiconductor–electrode junction with a tunable injection barrier, which is the basis for a primitive transistor architecture known as the Schottky barrier field‐effect transistor. This work demonstrates the next level of complexity in a vertical graphene–semiconductor architecture. Specifically, an organic vertical p‐n junction (p‐type pentacene/n‐type N,N′‐dioctyl‐3,4,9,10‐perylenedicarboximide (PTCDI‐C₈)) on top of a graphene electrode constituting a novel gate‐tunable photodiode device structure is fabricated. The model device confirms that controlling the Schottky barrier height at the pentacene–graphene junction can (i) suppress the dark current density and (ii) enhance the photocurrent of the device, both of which are critical to improve the performance of a photodiode.

中文翻译：

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肖特基势垒可控石墨烯电极可促进有机垂直P–N结光电二极管中的整流。

单层石墨烯被用作开发新型电子设备架构的电极，该架构利用材料的独特原子薄结构，在其电荷中性点具有低态密度。例如，堆叠在石墨烯上的单个半导体层可以提供带有可调注入势垒的半导体-电极结，这是称为肖特基势垒场效应晶体管的原始晶体管架构的基础。这项工作展示了垂直石墨烯-半导体体系结构中复杂性的新高度。具体而言，是有机垂直p-n结（p-型并五苯/ n-型N，N'-二辛基-3,4,9,10-二萘嵌二酰亚胺（PTCDI-C ₈））在石墨烯电极的顶部制造了一种新型的栅极可调光电二极管器件结构。该模型器件证实，在并五苯-石墨烯结处控制肖特基势垒高度可以（i）抑制暗电流密度和（ii）增强器件的光电流，这两者对于改善光电二极管的性能都是至关重要的。