当前位置: X-MOL 学术Adv. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Wafer‐Scale Synthesis of Reliable High‐Mobility Molybdenum Disulfide Thin Films via Inhibitor‐Utilizing Atomic Layer Deposition
Advanced Materials ( IF 29.4 ) Pub Date : 2017-11-02 , DOI: 10.1002/adma.201703031
Woojin Jeon 1 , Yeonchoo Cho 2 , Sanghyun Jo 2 , Ji-Hoon Ahn 3 , Seong-Jun Jeong 2
Affiliation  

A reliable and rapid manufacturing process of molybdenum disulfide (MoS2) with atomic‐scale thicknesses remains a fundamental challenge toward its successful incorporation into high‐performance nanoelectronics. It is imperative to achieve rapid and scalable production of MoS2 exhibiting high carrier mobility and excellent on/off current ratios simultaneously. Herein, inhibitor‐utilizing atomic layer deposition (iALD) is presented as a novel method to meet these requirements at the wafer scale. The kinetics of the chemisorption of Mo precursors in iALD is governed by the reaction energy and the steric hindrance of inhibitor molecules. By optimizing the inhibition of Mo precursor absorption, the nucleation on the substrate in the initial stage can be spontaneously tailored to produce iALD‐MoS2 thin films with a significantly increased grain size and surface coverage (>620%). Moreover, highly crystalline iALD‐MoS2 thin films, with thicknesses of only a few layers, excellent room temperature mobility (13.9 cm2 V−1 s−1), and on/off ratios (>108), employed as the channel material in field effect transistors on 6″ wafers, are successfully prepared.

中文翻译:

阻垢剂利用原子层沉积技术进行晶圆级合成可靠的高迁移率二硫化钼薄膜。

可靠且快速的,具有原子级厚度的二硫化钼(MoS 2)制造工艺仍然是其成功整合到高性能纳米电子技术中的根本挑战。必须同时生产出高载流子迁移率和出色的开/关电流比的MoS 2,以实现快速,可扩展的生产。在此,提出了利用抑制剂的原子层沉积(iALD)作为满足这些要求的新方法在晶圆级。iALD中Mo前体的化学吸附动力学受反应能量和抑制剂分子的空间位阻的控制。通过优化对Mo前驱物吸收的抑制作用,可以在初始阶段自发调整基底上的形核,以生产出具有显着增加的晶粒尺寸和表面覆盖率(> 620%)的iALD-MoS 2薄膜。此外,采用高度结晶的iALD-MoS 2薄膜作为通道,该薄膜的厚度仅为几层,具有出色的室温迁移率(13.9 cm 2 V -1 s -1)和开/关比(> 10 8)。成功地在6英寸晶圆上制备了场效应晶体管中的材料。
更新日期:2017-11-02
down
wechat
bug