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Temperature dependence of emission intensity in femtosecond laser-induced Ge plasma
Journal of Analytical Atomic Spectrometry ( IF 3.4 ) Pub Date : 2017-11-01 00:00:00 , DOI: 10.1039/c7ja00179g
Xiaowei Wang 1, 2, 3, 4, 5 , Anmin Chen 1, 2, 3, 4, 5 , Laizhi Sui 1, 2, 3, 4, 6 , Ying Wang 1, 2, 3, 4, 6 , Dan Zhang 1, 2, 3, 4, 6 , Suyu Li 1, 2, 3, 4, 6 , Yuanfei Jiang 1, 2, 3, 4, 6 , Mingxing Jin 1, 2, 3, 4, 6
Affiliation  

Femtosecond laser-induced breakdown spectroscopy (LIBS) of Ge at different initial sample temperatures is investigated. The spectral intensity of the Ge(I) 422.66 nm line is shown to decrease with increasing temperature. And, higher spectral emission intensity with an 800 nm laser wavelength is observed in comparison to a 400 nm laser wavelength. In order to understand this result, the transient relative reflectivity of a semiconductor Ge sample at different temperatures is measured by an ultrafast time-resolved pump-probe experiment. It is found that the change in the transient reflectivity of Ge at higher temperature is less than that at lower temperature, which may be the main reason for the decrease of spectral emission intensity.

中文翻译:

飞秒激光诱导的锗等离子体中发射强度的温度依赖性

飞秒激光诱导击穿光谱(LIBS)在不同的初始样品温度下的锗。显示Ge(I)422.66 nm线的光谱强度随温度升高而降低。并且,与400nm激光波长相比,观察到具有800nm激光波长的更高的光谱发射强度。为了理解该结果,通过超快时间分辨泵浦探针实验测量了在不同温度下半导体Ge样品的瞬态相对反射率。结果表明,高温下锗的瞬态反射率变化小于低温下,这可能是导致光谱发射强度下降的主要原因。
更新日期:2017-11-01
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