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Relaxation and saturation of electrostriction in 10 mol% Gd-doped ceria ceramics
Acta Materialia ( IF 9.4 ) Pub Date : 2018-02-01 , DOI: 10.1016/j.actamat.2017.10.056
Nimrod Yavo , Ori Yeheskel , Ellen Wachtel , David Ehre , Anatoly I. Frenkel , Igor Lubomirsky

Abstract 10 mol% Gd-doped ceria (10GDC) ceramics, with grain size in the single micron range, display electrostrictive behavior under ambient conditions of temperature and pressure. In weak, quasi-static electric fields, i.e. M 33 ) displaying large variability between samples: −(2-20)·10 −17 (m/V) 2 . Nevertheless, | M 33 | of all samples exceeds the values expected on the basis of the classical (Newnham) electrostriction scaling law by up to two orders of magnitude. A systematic study reveals the functional dependence of M 33 on frequency: above 10 Hz, |M 33 | decreases to ≈10 −18 (m/V) 2 , which may be characterized as non-Debye relaxation with non-ideality factor 0.35–1.13. For frequencies ≤1.5 Hz, increasing the field strength beyond 1 kV/cm results in an exponential decrease in | M 33 | : the longitudinal strain saturates at 1-4 ppm. Dielectric impedance spectra suggest that partitioning of the applied voltage between grain boundaries and grain cores may be a factor contributing both to the large variability in the electrostriction parameters, and to the strong dependence on electric field amplitude. The frequency dependence may have two sources: the slow electric field-driven reorganization of the Ce-containing active complexes in the electrostrictive medium as well as the influence of the grain boundaries. 10GDC ceramics may therefore be added to the list of non-classical electrostrictors which includes reduced and Gd-doped ceria thin films and (Nb,Y)-doped bismuth oxide ceramics.

中文翻译:

10 mol% Gd掺杂氧化铈陶瓷中电致伸缩的弛豫和饱和

摘要 10 mol% Gd 掺杂的氧化铈 (10GDC) 陶瓷,晶粒尺寸在单微米范围内,在环境温度和压力条件下表现出电致伸缩行为。在弱的准静态电场中,即 M 33 ) 显示样品之间的大可变性:-(2-20)·10 -17 (m/V) 2 。尽管如此,| M 33 | 所有样品的数量超过了基于经典 (Newnham) 电致伸缩标度定律的预期值最多两个数量级。一项系统研究揭示了 M 33 对频率的函数依赖性:高于 10 Hz,|M 33 | 降低到≈10 -18 (m/V) 2 ,这可以表征为非理想因子为0.35-1.13的非德拜弛豫。对于≤1.5 Hz 的频率,将场强增加到 1 kV/cm 以上会导致 | M 33 | :纵向应变在 1-4 ppm 处饱和。介电阻抗谱表明,在晶界和晶核之间分配施加的电压可能是导致电致伸缩参数大可变性和对电场幅度的强烈依赖性的一个因素。频率依赖性可能有两个来源:电致伸缩介质中含 Ce 活性配合物的缓慢电场驱动重组以及晶界的影响。因此,可以将 10GDC 陶瓷添加到非经典电致伸缩器的列表中,其中包括还原和 Gd 掺杂的氧化铈薄膜和 (Nb,Y) 掺杂的氧化铋陶瓷。
更新日期:2018-02-01
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