Abstract Gallium phosphide (GaP) nanowire film electrodes have been prepared via solid sublimation of GaP powder using both gold (Au) and tin (Sn) nanoparticles as the vapor-liquid-solid (VLS) catalysts on Si(1 1 1) and GaP(1 1 1)B substrates. The resultant GaP nanowires are compared and contrasted in terms of structures and photoactivity in photoelectrochemical half cells. Raman spectra implicated a difference in the surface condition of the two types of nanowires. Complete wet etching removal of metallic VLS catalysts from the as-prepared GaP nanowires was possible with Sn catalysts but not with Au catalysts. The photoresponses of both Sn- and Au-seeded GaP nanowire films were collected and examined under 100 mW cm −2 white light illumination. Au-seeded nanowire films exhibited strong n-type characteristics when measured in nonaqueous electrolyte with ferrocene/ferricenium as the redox species while Sn-seeded nanowires showed behavior consistent with degenerate n-type doping.

中文翻译：

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Au和Sn气-液-固催化剂作为光电极材料生长的GaP纳米线的比较

摘要 使用金 (Au) 和锡 (Sn) 纳米粒子作为 Si(1 1 1) 和 GaP 上的气-液-固 (VLS) 催化剂，通过 GaP 粉末的固体升华制备了磷化镓 (GaP) 纳米线薄膜电极。 (1 1 1)B 底物。所得的 GaP 纳米线在光电化学半电池的结构和光活性方面进行了比较和对比。拉曼光谱暗示两种纳米线的表面条件存在差异。使用 Sn 催化剂可以从所制备的 GaP 纳米线中完全湿法蚀刻去除金属 VLS 催化剂，但使用 Au 催化剂则不行。在 100 mW cm -2 白光照射下收集并检查了 Sn 和 Au 种籽的 GaP 纳米线薄膜的光响应。