Abstract In this work, we first study the effect of different growth parameters on the molecular beam epitaxy (MBE) growth of GaAs layers on (1 1 1)A oriented substrates. After that we present a method for the MBE growth of atomically smooth layers by sequences of growth and annealing phases. The samples exhibit low surface roughness and good electrical properties shown by atomic force microscopy (AFM), scanning electron microscopy (SEM) and van-der-Pauw Hall measurements.

中文翻译：

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克服 (1 1 1)A GaAs 分子束外延中的 Ehrlich-Schwöbel 势垒

摘要 在这项工作中，我们首先研究了不同生长参数对 (1 1 1)A 取向衬底上 GaAs 层的分子束外延 (MBE) 生长的影响。之后，我们提出了一种通过生长和退火阶段的序列来进行原子平滑层 MBE 生长的方法。通过原子力显微镜 (AFM)、扫描电子显微镜 (SEM) 和范德堡霍尔测量，样品表现出低表面粗糙度和良好的电性能。