Abstract Like all the ternary alloys in III-nitride materials family, aluminum gallium nitride (AlGaN) has unique band gap tuning property which enables the alloy to be suitable for many opto-electronic applications. The direct band gap of AlGaN can be tuned from 3.4 to 6.2 eV by changing the composition. In this article, the growth of ternary n-AlGaN micro and nano structures on Si (1 1 1) substrate is demonstrated via 2-step growth method employing metal organic chemical vapor deposition. During the growth flow of Trimethygallium is varied to modulate the final Al/Ga ratio. After the growth, various morphological, crystalline and optical characterizations are carried out to probe in the properties of the grown structures. Recorded X-ray diffraction patterns reveal that the realized structures are wurtzite single crystalline n-AlGaN having a near homogeneous Al distribution and validated by energy dispersive X-ray spectroscopy. Low temperature cathodoluminescence spectra show band edge emission in deep UV region which enables the grown n-AlGaN structures to efficiently find opto-electronic applications in the aforementioned region. Finally, planar photoconductive devices are fabricated using the grown 1-D structures and photocurrent evolution is measured. Structure bearing highest Al content shows a manifold enhancement in photo activity compared to other grown samples. Absolute photoresponsivities of the grown samples are calculated to be 301.47, 116 and 38.13 mA/W which is in accord with the findings of low temperature cathodoluminescence investigation. Therefore, it can be concluded that the successful realization of n-AlGaN 1-D structures varying Al content facilitates the further developments of the field concerning nano- and opto-electronic devices.

中文翻译：

---

使用 u -GaN 种子生长和表征具有不同 Al 成分的 n -AlGaN 一维结构

摘要 与 III 族氮化物材料家族中的所有三元合金一样，氮化铝镓 (AlGaN) 具有独特的带隙调谐特性，使其适用于许多光电应用。通过改变成分，AlGaN 的直接带隙可以在 3.4 到 6.2 eV 之间调整。在本文中，通过采用金属有机化学气相沉积的两步生长方法，证明了在 Si (1 1 1) 衬底上生长三元 n-AlGaN 微米和纳米结构。在 Trimethygallium 的生长过程中，流量会发生变化以调节最终的 Al/Ga 比率。生长后，进行各种形态、晶体和光学表征以探测生长结构的特性。记录的 X 射线衍射图显示，所实现的结构是纤锌矿单晶 n-AlGaN，具有近乎均匀的 Al 分布，并通过能量色散 X 射线光谱法验证。低温阴极发光光谱在深紫外区域显示带边发射，这使得生长的 n-AlGaN 结构能够有效地在上述区域找到光电应用。最后，使用生长的一维结构制造平面光电导器件并测量光电流演化。与其他生长的样品相比，具有最高铝含量的结构显示出光活性的多方面增强。计算出的生长样品的绝对光响应度分别为 301.47、116 和 38.13 mA/W，这与低温阴极发光研究的结果一致。所以，