Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer†,Sustainable Energy & Fuels

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Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer†
Sustainable Energy & Fuels ( IF 5.6 ) Pub Date : 2017-10-13 00:00:00 , DOI: 10.1039/c7se00402h
Yusuke Asakura _{1,

2,

3,

4} , Tomohiro Higashi _{1,

2,

3,

4} , Hiroshi Nishiyama _{1,

2,

3,

4} , Hiroyuki Kobayashi _{4,

5,

6,

7,

8} , Mamiko Nakabayashi _{2,

3,

4,

9} , Naoya Shibata _{2,

3,

4,

9} , Tsutomu Minegishi _{1,

2,

3,

4,

10} , Takashi Hisatomi _{1,

2,

3,

4} , Masao Katayama _{1,

2,

3,

4} , Taro Yamada _{1,

2,

3,

4} , Kazunari Domen _{1,

2,

3,

4}

Affiliation

Particulate Ta₃N₅, a material that responds to visible light for photoelectrochemical O₂ evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta₃N₅ to the back-contact metal layer and prevented hole–electron recombination.

中文翻译：

带有GaN空穴阻挡层的 Ta ₃ N ₅颗粒状水氧化光电阳极的活化†

颗粒Ta ₃ N ₅（一种对可见光作出响应的光电化学O ₂释放材料）被粘在金属GaN导电层上。与没有GaN的电极相比，该电极能够以1.8倍的高效率氧化水。GaN层阻止了从Ta ₃ N ₅到背接触金属层的空穴电流，并阻止了空穴与电子的复合。

更新日期：2017-10-13

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