A new compound Ce₂PtGe₃ was synthesized using arc-melting process. The compound crystallizes in an orthorhombic Cmce crystal structure with lattice parameters a = 8.5157(17) Å, b = 14.7496(29) Å and c = 4.2511(9) Å. The structure of Ce₂PtGe₃ can be derived from the structure of YAlGe, which is another superstructure derivative of the AlB₂ prototype crystallizing in the Cmcm space group. The crystal structure of Ce₂PtGe₃ is composed of infinite arrays of hexagonal [Pt₃Ge₃] units stacked along the b-axis and the Ce sites are sandwiched between these parallel hexagonal networks, which is closely related to the other known orthorhombic superstructures Ca₂AgSi₃ (SG: Fmmm) and Ba₂LiSi₃ (SG: Fddd) in the AlB₂ family. Both DC and AC susceptibility measurements reveal a spin glass state probably arising from non-magnetic atomic disorder (NMAD) from positional disorder from a part of Pt and Ge crystallographic sites. This was further supported by specific heat capacity measurements with a high value of γ = 125 mJ mol⁻¹ K⁻². The modified Curie–Weiss fitting yielded a residual magnetic moment (χ₀) 0.0011 emu mol⁻¹, and Curie paramagnetic temperature, θ_p = −21.5 K suggesting antiferromagnetic coupling and an effective magnetic moment of 3.09μ_B per Ce which indicates the presence of Ce³⁺. A thorough analysis of the temperature dependent resistivity data revealed that the compound might be a Kondo semiconductor at low temperature.

中文翻译：

---

Ce ₂ PtGe ₃：具有自旋玻璃行为的AlB ₂族中的新有序斜方上层结构†

采用电弧熔融法合成了一种新的化合物Ce ₂ PtGe ₃。该化合物以正交晶Cmce晶体结构结晶，晶格参数为a = 8.5157（17），b = 14.7496（29），c = 4.2511（9）。Ce ₂ PtGe ₃的结构可以源自YAlGe的结构，YAlGe是在Cmcm空间群中结晶的AlB ₂原型的另一种超结构衍生物。Ce ₂ PtGe ₃的晶体结构由六方[Pt ₃ Ge ₃]沿堆叠单元b -轴和Ce的位点，这些平行六边形网络，这是密切相关的其它已知的正交晶系钙上层建筑之间夹₂ AGSI ₃（SG：Fmmm）和Ba ₂李四₃（SG：Fddd）在AlB ₂系列。直流磁化率和交流磁化率的测量都揭示了自旋玻璃态，可能是由于部分Pt和Ge晶体位点的位置无序而引起的非磁性原子无序（NMAD）引起的。高比重γ = 125 mJ mol ^-1 K ^-2的比热容测量进一步支持了这一点。。修改后的居里-外斯拟合得到的残余磁矩（χ ₀）0.0011摩尔鸸^-1，以及居里温度的顺磁，θ _p = -21.5ķ暗示反铁磁性耦合和3.09的有效磁矩μ_乙每铈，其指示存在的Ce ³⁺。对与温度相关的电阻率数据的透彻分析表明，该化合物在低温下可能是近藤半导体。