High‐density application of 3D vertical crossbar resistive random access memory (3D‐VRRAM) is challenging due to sneak leakage paths, which can be combated by using nonlinear low resistance state or complementary resistive switching (CRS). This work presents high‐resolution transmission electron microscopy (HRTEM) observation of nanofilaments during resistive switching (RS) in a TiO_x/Al₂O₃‐based bilayer submicrometer 3D‐VRRAM hybrid device and the reset‐failure‐induced transformation from RS to CRS. The complete concept is divided into two parts. The first part is RS, where the devices show reliable switching, stable resistance levels, good retention, and moderately higher nonlinear behavior at the low resistance state. The RS mechanism is confirmed by an HRTEM image of a clear formation of conductive Ti₅O₉ nanofilament followed by a tunnel gap. The second part presents the realization of CRS operation after the reset failure in common electrodeless TiO_x/Al₂O₃‐based 3D‐VRRAM hybrid devices. The formation of a series resistor along with the filament is the reason behind the evolution of the CRS mode. Higher nonlinearity is achieved under CRS as compared to RS. Further to this, for broad applications, it is essential to examine similar phenomena in other 3D‐VRRAM systems.

中文翻译：

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3D电阻式存储器阵列中的互补切换

3D垂直交叉开关电阻式随机存取存储器（3D-VRRAM）的高密度应用由于潜漏路径而具有挑战性，可以通过使用非线性低电阻状态或互补电阻切换（CRS）来解决这种情况。这项工作提出了在TiO _x / Al ₂ O ₃中电阻转换（RS）期间纳米丝的高分辨率透射电子显微镜（HRTEM）观察。基于双层的亚微米3D-VRRAM混合设备以及重置失败导致的从RS到CRS的转换。完整的概念分为两​​个部分。第一部分是RS，其中器件在低电阻状态下显示出可靠的开关，稳定的电阻水平，良好的保持性以及适度较高的非线性行为。RS机制是由HRTEM图像证实的，该图像清晰地形成了导电Ti ₅ O ₉纳米丝，然后形成了隧道间隙。第二部分介绍了普通无电极TiO _x / Al ₂ O ₃复位失败后CRS操作的实现基于3D-VRRAM的混合设备。与灯丝一起形成串联电阻是CRS模式演变的原因。与RS相比，在CRS下实现了更高的非线性。除此之外，对于广泛的应用，必须检查其他3D-VRRAM系统中的类似现象。