Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next‐generation photovoltaics with performance beyond the single‐junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm⁻². In combination with a cesium‐based perovskite top cell, this leads to tandem cell power‐conversion efficiencies of up to 22.7% obtained from J–V measurements and steady‐state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm² monolithic tandem cell with a steady‐state efficiency of 18%.

中文翻译：

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具有纳米晶硅复合结的整体钙钛矿/硅串联太阳能电池中的改进光学性能

钙钛矿/硅串联太阳能电池已被公认为是下一代光伏的有前途的候选者，其性能超过单结极限，且生产成本可能较低。当前用于单片双极的设计依赖于透明的导电氧化物作为中间复合层，这导致了光损耗并降低了分流电阻。展示了一种改进的基于纳米晶硅层的复合结，可减轻这些损失。当用于具有平坦正面的整体钙钛矿/硅异质结串联电池中时，发现该结可将底部电池的光电流增加超过1 mA cm ^-2。与基于铯的钙钛矿顶部电池结合使用时，通过J – V测量获得的串联电池功率转换效率高达22.7％，而在最大功率点跟踪期间的稳态效率高达22.0％。由于其较低的横向电导率，纳米晶硅复合结使单片钙钛矿/硅异质结串联电池的规模得以扩大，从而形成了一个12.96 cm ^2的单片串联电池，稳态效率为18％。