With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe₂ and ReX₂ (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

中文翻译：

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基于二维新型各向异性过渡金属二硫化物的电子和光电应用

随着二维过渡金属二硫属化物（TMD）的不断探索，基于二维TMD卓越的电子和光电性质的新型高性能器件越来越多地出现。作为二维TMD家族的新鲜血液，各向异性MTe ₂和ReX ₂ (M = Mo，W，X = S，Se)由于其低对称性结构和迷人的力学、电子学、光电子学特性而受到越来越多的关注。适用于场效应晶体管（FET）、光电探测器、热电和压电应用，特别是各向异性器件。本文对其进行了全面的综述，重点介绍了它们的最新进展和近年来的各种应用。首先，讨论了通过各种技术表征的晶体结构和强各向异性的起源。具体来说，介绍了这些二维材料的制备并总结了各种生长方法。然后，讨论了这些各向异性 TMD 的高性能应用，包括 FET、光电探测器以及热电和压电应用。最后对这些应用提出了结论和展望。