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Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy
Nature Nanotechnology ( IF 38.3 ) Pub Date : 2017-09-18 , DOI: 10.1038/nnano.2017.161
Ji Ho Sung , Hoseok Heo , Saerom Si , Yong Hyeon Kim , Hyeong Rae Noh , Kyung Song , Juho Kim , Chang-Soo Lee , Seung-Young Seo , Dong-Hwi Kim , Hyoung Kug Kim , Han Woong Yeom , Tae-Hwan Kim , Si-Young Choi , Jun Sung Kim , Moon-Ho Jo

Crystal polymorphism selectively stabilizes the electronic phase of atomically thin transition-metal dichalcogenides (TMDCs) as metallic or semiconducting, suggesting the potential to integrate these polymorphs as circuit components in two-dimensional electronic circuitry. Developing a selective and sequential growth strategy for such two-dimensional polymorphs in the vapour phase is a critical step in this endeavour. Here, we report on the polymorphic integration of distinct metallic (1T′) and semiconducting (2H) MoTe2 crystals within the same atomic planes by heteroepitaxy. The realized polymorphic coplanar contact is atomically coherent, and its barrier potential is spatially tight-confined over a length of only a few nanometres, with a lowest contact barrier height of 25 meV. We also demonstrate the generality of our synthetic integration approach for other TMDC polymorph films with large areas.



中文翻译:

通过多态异质外延在多层MoTe 2上定义的共面半导体-金属电路

晶体多态性选择性地稳定了原子薄的过渡金属二卤化金属(TMDC)的电子相,使其成为金属或半导体,这暗示了将这些多晶型物整合为二维电子电路中的电路组件的潜力。为此,开发针对此类二维多晶型物的选择性和顺序生长策略是至关重要的一步。在这里,我们通过异质外延报道了在相同原子平面内不同金属(1T')和半导体(2H)MoTe 2晶体的多晶型整合。实现的多晶共面接触在原子上是相干的,并且其势垒势在空间上仅局限在几纳米的范围内,最低的接触势垒高度为25兆电子伏。我们还证明了其他大面积TMDC多晶型薄膜的合成集成方法的一般性。

更新日期:2017-09-18
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