A 2-μm-long Ni ion-chelated DNA molecule (Ni–DNA) was found for the first time to possess both memcapacitor and memristor properties; this Ni–DNA molecule is known as a dual memory circuit element (memelement). As a memelement, the state of impedance on Ni–DNA is proportional to the unit number of Ni ions containing a base pair complex (Ni–bp), which is determined by the previously applied external voltage. Interestingly, the impedances of Ni–DNA change in response to a change in the sweeping frequencies of the external bias. Our simulation results also indicate that changes in the effective resistance and capacitance of Ni–bp may be attributed to changes in the Ni ion redox species in the Ni–bp of a Ni–DNA nanowire. Therefore, the working mechanism of a nanowire-type memcapacitor and memristor is revealed. In summary, the Ni–DNA nanowire is shown to be a multi-dimensional memory device, whose memory state depends on the length of DNA and applied external voltages/frequencies.

首次发现一个2μm长的Ni离子螯合的DNA分子（Ni–DNA）兼具忆阻器和忆阻器特性。这种Ni–DNA分子被称为双重记忆电路元件（memelement）。作为一种记忆，Ni–DNA上的阻抗状态与包含碱基对络合物（Ni–bp）的Ni离子的单位数量成比例，这由先前施加的外部电压确定。有趣的是，Ni-DNA的阻抗随外部偏置扫描频率的变化而变化。我们的模拟结果还表明，Ni-bp的有效电阻和电容的变化可能归因于Ni-DNA纳米线的Ni-bp中的Ni离子氧化还原物质的变化。因此，揭示了纳米线型忆阻器和忆阻器的工作机理。总之，