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2D Resistive Switching Memories: Graphene and Related Materials for Resistive Random Access Memories (Adv. Electron. Mater. 8/2017)
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2017-08-07 , DOI: 10.1002/aelm.201770032
Fei Hui 1 , Enric Grustan-Gutierrez 1 , Shibing Long 2 , Qi Liu 2 , Anna K. Ott 3 , Andrea C. Ferrari 3 , Mario Lanza 1
Affiliation  

Graphene and related materials, such as graphene oxide, hexagonal boron nitride, transition metal dichalcogenides and black phosphorous, are promising candidates for the fabrication of resistive random access memories (RRAM), a technology which could represent the next generation of non‐volatile computer memory. In article number 1600195, Mario Lanza and co‐workers explore this emerging field; they discuss, classify, and evaluate a number of materials candidates, and summarize the performance of a number of RRAM prototype devices based on these materials.
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中文翻译:

2D电阻切换存储器:用于电阻随机访问存储器的石墨烯和相关材料(Adv。Electron Mater。8/2017)

石墨烯及其相关材料,例如氧化石墨烯,六方氮化硼,过渡金属二硫属化合物和黑色磷,有望成为制造电阻式随机存取存储器(RRAM)的候选材料,该技术可以代表下一代非易失性计算机存储器。在编号1600195中,马里奥·兰扎(Mario Lanza)及其同事探索了这一新兴领域。他们讨论,分类和评估了许多候选材料,并总结了基于这些材料的许多RRAM原型设备的性能。
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更新日期:2017-08-07
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