Atomic‐layer‐deposited SnO₂ is used as a gate electrode to replace indium tin oxide (ITO) in thin‐film transistors and circuits for the first time. The SnO₂ films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10⁻³ Ω cm with ≈93% transparency in most of the visible range of the electromagnetic spectrum. Thin‐film transistors fabricated with SnO₂ gates show excellent transistor properties including saturation mobility of 15.3 cm² V⁻¹ s⁻¹, a low subthreshold swing of ≈130 mV dec⁻¹, a high on/off ratio of ≈10⁹, and an excellent electrical stability under constant‐voltage stressing conditions to the gate terminal. Moreover, the SnO₂‐gated thin‐film transistors show excellent electrical characteristics when used in electronic circuits such as negative channel metal oxide semiconductor (NMOS) inverters and ring oscillators. The NMOS inverters exhibit a low propagation stage delay of ≈150 ns with high DC voltage gain of ≈382. A high oscillation frequency of ≈303 kHz is obtained from the output sinusoidal signal of the 11‐stage NMOS inverter‐based ring oscillators. These results show that SnO₂ can effectively replace ITO in transparent electronics and sensor applications.

中文翻译：

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原子层沉积的SnO2作为无铟透明电子的栅电极

原子层沉积的SnO ₂用作栅电极，首次替代了薄膜晶体管和电路中的铟锡氧化物（ITO）。所述的SnO ₂沉积在200℃下膜显示的≈3.1×10低电阻率^-3 Ω厘米≈93％的透明度在大多数的电磁频谱的可见范围内的。薄膜晶体管制造具有SnO _2个栅极显示出优异的晶体管特性包括15.3厘米饱和迁移率² V ^-1小号^-1，≈130毫伏分解的低亚阈值摆幅^-1，开/高关的≈10比⁹，并且在对栅极端子施加恒定电压的条件下具有出色的电气稳定性。此外，SnO _2门控薄膜晶体管在诸如负沟道金属氧化物半导体（NMOS）反相器和环形振荡器之类的电子电路中使用时，显示出出色的电气特性。NMOS反相器展现出≈150ns的低传播级延迟，并具有≈382的高DC电压增益。从11级基于NMOS反相器的环形振荡器的输出正弦信号可获得≈303kHz的高振荡频率。这些结果表明，SnO ₂可以有效替代透明电子和传感器应用中的ITO。