Combining layered MoS₂ flakes with conventional 3D semiconductors is a feasible route to fabricate high-quality heterojunction devices by harnessing the advantages of both materials. Here, we present a pressure-modulated heterojunction photodiode that is composed of an n-type multilayer MoS₂ and a p-type GaN film via the piezo-phototronic effect. Under the illumination of 365 nm incident light, a strong photoresponse is observed with response and recovery times of ~66 and 74 ms, respectively. Under a pressure of 258 MPa, the photoresponsivity of this photodiode can be tuned by the piezo-phototronic effect arising from the GaN film to ~3.5 times. Because of the lowered junction barrier with an applied external pressure (strain), more photogenerated carriers can successfully pass through the junction area without recombination, which results in an enhancement effect. This work provides a possible path for the implementation of high-performance electronic and optoelectronic devices that are based on hybrid heterostructures via human interfacing.

通过利用两种材料的优势，将分层的MoS ₂薄片与常规3D半导体相结合是制造高质量异质结器件的可行途径。在这里，我们介绍了一种由n型多层MoS ₂和p构成的压力调制异质结光电二极管压电效应形成GaN型GaN薄膜。在365 nm入射光的照射下，观察到强烈的光响应，响应时间和恢复时间分别约为66 ms和74 ms。在258 MPa的压力下，可以通过GaN膜产生的压电效应将该光电二极管的光响应性调整至〜3.5倍。由于在施加外部压力（应变）的情况下降低了结势垒，因此更多的光生载流子可以成功地通过结区，而不会发生重组，从而增强了效果。这项工作为通过人机接口实现基于混合异质结构的高性能电子和光电设备提供了一条可能的途径。