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Advancements in Iso-Diameter seeded growth of CdZnTe crystals: A numerical modeling approach and applications in liquid phase Epitaxy J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-13 Chao Xu, Juan Zhang, Zhou Changhe, Li Shangshu, Ruiyun Sun
CdZnTe (CZT) is the preferred material for HgCdTe (MCT) infrared detectors and room temperature nuclear-radiation detector applications. However, their widespread application is hindered by the low yield, attributed to intrinsic thermophysical properties like extremely low thermal conductivity and stacking fault energy, complicating the growth of large-volume crystals. Based on a steady-state computer
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Growth and magnetocaloric effect of Na2Gd2(BO3)2O crystal J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-12 Yuwei Chen, Wang Liu, Zuhua Chen, Zhenxing Li, Jun Shen, Heng Tu, Guochun Zhang
High-quality NaGd(BO)O crystals have been successfully grown using the top-seeded solution growth method (TSSG), employing a NaO - NaF - BO flux system with optimal molar ratios of NaGd(BO)O : NaCO : NaF : HBO = 1:2:6:4. The magnetic and magnetocaloric properties were investigated including magnetic susceptibility (), magnetization (), and isothermal magnetic entropy change () measurements. NaGd(BO)O
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Synthesis and phase transformation study of nanostructured manganese oxide polymorphs J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-08 Abdelmalik Zemieche, Loubna Chetibi, Djamel Hamana, Slimane Achour, Gioele Pagot, Vito Di Noto
This paper presents the green synthesis of manganese oxide nanoparticles using olive leaf extract (OLE). The extract functions as both a reducing agent, responsible for converting manganese ions into nanoparticles, and a capping agent, aiding in stabilizing the formed nanoparticles. Our focus lies on investigating the thermal stability, phase transformation, and decomposition temperatures of different
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Preparation, characterization, and antibacterial activity of Ni, Sn co-doped ZnO nanoparticles: Effect of Sn doping concentration J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-08 L.Bruno Chandrasekar, M.Divya Gnaneswari, A.Murugeswari, P.Shunmuga Sundaram, N.Ananthan, M.Karunakaran
Ni, Sn co-doped ZnO nanoparticles have been prepared by chemical method at room temperature. The effects of Sn on the structural, morphological, optical, electrical, and anti-microbial properties of the prepared nanoparticles have been evaluated and discussed. The crystallite size and the unit cell properties have been influenced by the doping concentration of Sn. The addition of Sn enhances the texture
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Dissolution‑recrystallization growth and structural characteristics of facile decomposition-processed NiFe2O4 octahedrons J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-06 Pimjai Saengkwamsawang, Panuwat Katekaew, Arrak Klinbumrung
In this paper, NiFeO powders were prepared by a thermal decomposition process with various temperatures. The structural characteristic and intrinsic defect were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, ultraviolet–visible (UV–vis) spectroscopy, and photoluminescence (PL). The morphology was investigated by scanning electron microscope (SEM) and transmission
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Conversion of silicon wafer type from perfect-interstitial to perfect-vacancy by rapid thermal process J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-05 Armando Giannattasio
Vacancies, self-interstitials, and Frenkel pairs represent the basic point defects in silicon single-crystals and are unavoidably introduced in the ingots during the manufacturing process. In semiconductor technology, several problems are caused by points defects that are not at thermodynamic equilibrium. For this reason, virtually defect-free silicon wafers having a small residual concentration of
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The effect of Te solution volume on the growth of CdZnTe crystals by Traveling Heater Method J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-29 Jijun Zhang, Yongwu Qi, Wanping Liu, Jiongjiong Wei, Hao Liu, Xiaoyan Liang, Linjun Wang
Nowadays, Traveling Heater Method (THM) is demonstrated to be one of the most promising ways to grow high-quality CdZnTe (CZT) crystals. The THM is essentially a melt-solution growth method, in which the CZT solute diffuses from the dissolution interface to the growth interface in the Te solution and deposits on the CZT seed. In this work, the effects of Te solution volumes on the structure of CZT
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Corrigendum to “A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction” [J. Cryst. Growth 629 (2024) 127516] J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-29 S, u, r, y, a, n, s, h, , D, o, n, g, r, e
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Single crystalline high-purity germanium bars grown by the zone-refining technique J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-29 Kevin-P. Gradwohl, Alexander Gybin, Christo Guguschev, Albert Kwasniewski, Mike Pietsch, Uta Juda, Carsten Richter, R. Radhakrishnan Sumathi
A novel low-temperature-gradient zone-refining setup is presented here which allows for single crystalline zone-refining of high-purity Ge. The reported single crystalline zone-refined Ge bar has a length of 680 mm and shows a high structural quality, as confirmed by X-ray diffraction techniques. The dislocation density determined by an etch pit density analysis lies between 10 and 10 cm. The Ge bar
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Hydrothermally grown pure and Er-doped ZnS nanocrystals based flexible piezoelectric nanogenerator for energy harvesting and sensing applications J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-27 Puneet Sagar, Nidhi Sinha, Binay Kumar
Pure zinc sulphide (ZnS) and Er-doped ZnS nanocrystals were grown by hydrothermal method at low temperature. Powder XRD analysis reveals the formation of wurtzite hexagonal phase structure for both pure and Er-doped ZnS samples. Morphology of 2D nanocrystals for both pure and doped ZnS nanocrystals was confirmed by FESEM technique. Presence of Er element in Er-doped ZnS was confirmed by energy-dispersive
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Role of carbon in n-type bulk GaN crystals J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-24 M. Amilusik, M. Zajac, M. Fijalkowski, M. Iwinska, T. Sochacki, D. Wlodarczyk, A.K. Somakumar, R. Jakiela, A. Suchocki, M. Bockowski
In this work co-doping with silicon and carbon in gallium nitride grown by halide vapor phase epitaxy was performed. Native seeds of high structural quality with bowing radii of (0001) crystallographic planes higher than 15 m and threading dislocation density on the order of 5 × 10 cm were used. The crystallized material was examined in terms of structural, optical, and electrical properties. For this
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Structural and resistivity properties of Fe1-xCoxSe single crystals grown by the molten salt method J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-24 Qiaoyu Wang, Mingwei Ma, Binbin Ruan, Menghu Zhou, Yadong Gu, Qingsong Yang, Lewei Chen, Yunqing Shi, Junkun Yi, Genfu Chen, Zhian Ren
A series of tetragonal FeCoSe single crystals with a complete Co doping range (0 ≤ x ≤ 0.52) up to its solid solubility limit in FeSe have been grown by an eutectic AlCl/KCl molten salt method. The typical lateral size of as-grown FeCoSe single crystals is 1–5 mm. The chemical composition and homogeneity of the crystals was examined by both inductively coupled plasma atomic emission spectroscopy and
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Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃ J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-24 Dongmin Yoon, Hyerin Shin, Seokmin Oh, Chunghee Jo, Kiseok Lee, Seonwoong Jung, Dae-Hong Ko
Low temperature Si and SiGe epitaxy have been crucial in the semiconductor industry, prompting interest in high-order silanes as Si precursors. In this study, we investigated the growth characteristics of Si and SiGe epitaxial layers using SiH, SiH, and SiH precursors by ultra-high vacuum chemical vapor deposition at temperatures between 500℃ and 600 ℃. We examined the effects of each precursor on
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Cationic order-related magnetoresistivity and half-metallicity in bulk Pb2FeMoO6 grown by high pressure synthesis J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-23 Chiara Coppi, Riccardo Cabassi, Francesco Mezzadri, Massimo Solzi, Francesco Cugini, Edmondo Gilioli, Davide Delmonte
We investigate the electric properties of PbFeMoO (PFMO), a double perovskite that can be grown in a bulk pure phase only via High Pressure/High Temperature solid-state reaction. The as-obtained PFMO is characterized by a high degree of cationic ordering at the B site between Fe and Mo and a ferrimagnetic transition with T around 275 K. A semi-metallic to half-metallic transition seems to occur when
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Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-22 Huyin Zhao, Xuefei Li, Yingchun Zhao, Ming Tan, Wenxian Yang, Tieshi Wei, Shulong Lu
In this paper, the effect of low-temperature buffer layer on the quality of InGaAs grown on GaP/Si templates is investigated. Three different materials, InP, GaAs/InAs and InAs/InP, were grown on GaP/Si templates by molecular beam epitaxy (MBE). The interfacial states between the above materials and the GaP layer were calculated using first principles methods. It was found that the interfacial structure
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Monte Carlo simulation of planar GaAs nanowire growth J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-21 A.A. Spirina, N.L. Shwartz
The Monte Carlo model for the planar GaAs nanowire growth via the vapor–liquid-solid mechanism on GaAs substrate using a gallium droplet as a catalyst is realized. The effect of temperature, Ga and As deposition rates, substrate orientation and surface properties on the morphology of planar GaAs nanowires is considered. It is shown, that at the initial stages of nanowire growth, a 3D GaAs crystal is
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Numerical simulation of flow and mass transfer during the process of large-sized cuboid KDP crystals grown by the LSLM J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-20 Hang Liu, Yi Xiao, Binbin Lin, Duanyang Chen, Hongji Qi
The growth of high-quality large-sized KDP crystals is to meet the requirements of high-power laser systems. The convective transport characteristics of KDP solution are one of the key factors affecting the growth of large-sized KDP crystals in the growth vessel. In this work, the three-dimensional simulation of flow and mass transfer occurring in the process of large-sized cuboid potassium dihydrogen
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Recent advances of rare earth iron garnet magneto-optical single crystals J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-16 Hui Shen, Yu Zhao, Leifan Li, Qixin Li, Heyan Geng, Yasheng Li, Xuanbing Shen, Jiayue Xu, Ding Zhou, Tian Tian, Yunfeng Ma, Jiamin Shang, Anhua Wu
RFeO (RIG) crystals are the most desirable elements for magneto-optical isolators in the near-infrared (NIR) to mid-infrared (MIR) region, with ever-growing demands for optical fiber communication and high-power laser system. Now, this system is the only commercialized Faraday rotator for optical isolators in 5G wireless communications. However, the growth of high-quality bulk RIG single crystals has
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Exploring 2D materials by high pressure synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-15 N.D. Zhigadlo
In materials science, selecting the right synthesis technique for specific compounds is one of the most important steps. High-pressure conditions have a significant effect on the crystal growth processes, leading to the creation of unique structures and properties that usually are not possible under normal conditions. The prime objective of this article is to illustrate the benefits of using high-pressure
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Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals for IR applications: The role of the composition and sin-band redshift spectra effect J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-15 Sergei V. Naydenov, Oleksii K. Kapustnyk, Igor M. Pritula, Nazar O. Kovalenko, Igor S. Terzin, Dmitro S. Sofronov, Pavel V. Mateichenko
Doped semiconductor crystals of solid solution CdMnTe:Fe were grown by the high-pressure Bridgman method, covering the range of their existence as a zinc blende structure (0 < < 0.76). The concentration of the Fe impurities was approximately 10 wt% in all the studied samples. The structural and optical properties of the crystals were investigated, including the case of high concentrations of > 0.4
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Recovery of lithium from Li-ion battery leachate by gas-liquid precipitation J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-15 L.E. Ramírez Velázquez, Laëtitia Palos, Marie Le Page Mostefa, Hervé Muhr
Today Li-ion battery recycling processes allow the recovery of heavy metal elements such as copper, cobalt, nickel and manganese. On the other hand, lithium is generally lost in slag or released to the environment and therefore is not recovered. Lithium is an element non-substitutable of Li-ion batteries which technology is indispensable in electromobility and energy transition. Moreover, since 2020
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Crystallization of ferritin on biocompatible Surfaces – Bare Ti and Ti covered by polypyrrole (PPy) J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-10 Daniela S. Tsekova, Vasil Karastoyanov, Daniel Peychev, Ivonka Valova
The purpose of this study was to examine crystallization of ferritin on some biocompatible materials, like bare Ti, and Ti substrate covered by polypyrrole (PPy) through electrochemical polymerization.
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Non-reversibility of crystal growth and Dissolution: Nanoscale direct observations and kinetics of transition through the saturation point J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-09 Natalia N. Piskunova
Atomic force microscopy experiments with modelling nature-like factors affecting crystal-genetic processes registered phenomena accompanying continuous transition from dissolution to growth (through the saturation point) on one and the same defect in a molecular hydroxymethylquinoxalinedioxide (CHNO) crystal. The conducted analysis of the mechanisms of attachment/detachment of the matter to the crystal
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Low-defect-density SnSe2 films nucleated via thin layer crystallization J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-08 S.A. Ponomarev, K.E. Zakhozhev, D.I. Rogilo, A.K. Gutakovsky, N.N. Kurus, K.A. Kokh, D.V. Sheglov, A.G. Milekhin, A.V. Latyshev
We have studied the structural and morphological features of SnSe films grown on Si(111) and BiSe(0001) surfaces in an reflection electron microscope. On both substrates, the SnSe growth started at 100 °C as an amorphous layer, and when thickness reached 1 nm, crystallized by raising the growth temperature to 250 °C without interruption of Sn and Se fluxes. The introduction of this growth-initiating
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A density functional theory study on the gas-phase formation of InGaN by metalorganic chemical vapor deposition J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-08 Yukang Sun, Peng Su, Hong Zhang, Guangyu Zheng, Ran Zuo, Lijun Liu
Density functional theory was used to analyze the formation of InGaN from trimethyl indium (TMIn) and trimethyl gallium (TMGa) by metalorganic chemical vapor deposition in ammonia in terms of oligomerization reactions of the nitrides and the elimination reactions of the oligomers formed. The reaction pathways were assumed by reference to previous studies, and their free energy and energy barrier characteristics
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Phase-controlled growth of indium selenide by metalorganic chemical vapor deposition J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-08 Yukihiro Endo, Yoshiaki Sekine, Yoshitaka Taniyasu
Indium selenide (InSe), group III-VI semiconductor, has various crystal phases, so that the growth technique for controlling the crystal phase is necessary for studying the novel properties as well as the device applications. In this work, we demonstrate the phase-controlled growth of InSe using metalorganic chemical vapor deposition. As the growth temperature increases, the crystal phase changes from
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Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-07 Yuki Nakanishi, Kentaro Kutsukake, Yifan Dang, Shunta Harada, Miho Tagawa, Toru Ujihara
In the top-seeded solution growth (TSSG) method for SiC, control of macrostep development is crucial for improving the crystal quality. Dislocation conversion phenomena caused by macrosteps with a certain height on the crystal surface can reduce the dislocation density, while over-developed macrosteps bring macroscopic defects such as solvent inclusions. It is experimentally reported that solution
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Mechanisms of nucleation and post-nucleation of bismuth tri-iodide onto graphene substrates J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-07 Laura Fornaro, Camila Maidana, Heinkel Bentos Pereira, Ana Noguera, Alvaro Olivera
In recent years, there has been a large amount of reports related to non-classical crystal nucleation, which does not follow the established classical nucleation theory (CNT). The same applies to the various paths that nucleated entities follow during their post-growth, which also turn out to be non-classical. The majority of these studies focus on homogeneous nucleation in liquid–solid systems, with
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Faceted-rough surface in the non-equilibrium steady state near equilibrium J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-06 Noriko Akutsu
Faceted rough surfaces near equilibrium in nucleation limited steady crystal growth is demonstrated using the Monte Carlo method, where “faceted” means the terrace and side surfaces of a macrostep are atomically and thermodynamically smooth at equilibrium due to anomalous surface tension caused by a step–step attraction at sufficiently low temperatures. The surface growth velocity and surface width
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A novel approach to reduce the oxygen content in monocrystalline silicon by Czochralski method J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-06 Jiancheng Li, Junlei Wang, Lijun Liu, Yong Wen, Changzhen Wang
High-efficiency solar cells require monocrystalline silicon wafers with lower oxygen content. This paper presents a design for an oxygen-lowering ring to decrease the oxygen content of 300 mm monocrystalline silicon, and experimentally verifies its effectiveness in reducing oxygen. Numerical simulations show that the use of the oxygen-lowering ring leads to a decrease of the crucible temperature at
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Editor’s note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X] J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-06 Jeffrey Derby
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Report from the meetings of the International Organization for Crystal Growth governing bodies held during the ICCGE-20 Conference in Napoli, Italy July 30th – August 4th 2023 J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-05 Stanislaw Krukowski
Abstract not available
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Light-induced E-Z isomerization of anthracene-appended p-methoxyphenyl acrylonitrile giving fluorescent crystals J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-03 Hiroki Tanikubo, Takumi Matsuo, Shotaro Hayashi
Acrylonitrile-based π-conjugated molecules are an important class of molecular materials due to their unique solid-state optical properties. On the other hand, anthracenes are also known as classical structures demonstrated unique reactivities and optical properties. Herein, we report crystal structure and optical properties of 9-(4-methoxyphenylacrylonitrile)anthracene, . Knoevenagel condensation
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Very high solubility and low enthalpy of dissolution of orthorhombic lysozyme crystals grown in deionized water J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-03 Yoshihisa Suzuki, Kohei Hosokawa
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Solid solution perovskite substrate materials with indifferent points J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-03 Vincent J. Fratello, Lynn A. Boatner, Hanna A. Dabkowska, Antoni Dabkowski, Theo Siegrist, Kaya Wei, Christo Guguschev, Detlef Klimm, Mario Brützam, Darrell G. Schlom, Shanthi Subramanian
Single-crystal substrate materials with crystal structures and lattice parameters matching a desired epitaxial film are an enabling technology for many critical materials. Such substrates are best grown by bulk techniques that benefit from the substrate material being congruently melting. The shortage of congruently melting perovskites in critical lattice parameter ranges has been addressed herein
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Segregation and constitutional supercooling in Nd:YAG Czochralski crystal growth J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-02 M. Asadian, F. Zabihi, H. Saeedi
This article examines the issues of segregation and constitutional supercooling (CSC) in the context of industrial highly-doped Nd:YAG crystal growth. The study involved the growth of several Nd:YAG crystals using Czochralski method, revealing that the heavily Nd doped YAG crystals often cracked during the late stage of shoulder growth. At this stage, the solid–liquid interface instability was observed
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Quality improvement of ZnTe crystals by annealing in In and Zn vapor J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-01 Lingli Wei, Changbao Huang, Youbao Ni, Haixin Wu, Zhenyou Wang, Xuezhou Yu, Qianqian Hu, Guojin Liu, Qiang Zhou
In this paper, a large-size and crack-free ZnTe single crystal 40 mm in diameter and 110 mm in length was grown in a two-zone vertical furnace by the modified Bridgman method. To reduce the defect concentration and improve the resistivity of ZnTe crystals for satisfying the requirements in terahertz applications, we investigated an effective thermal annealing process with the first step in Zn vapor
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Biogenic synthesis of Cd doped SrFe2O4 nanoparticles using Datura metel leaves extract and its performance as photocatalytic agent for mixed dyes and electrochemical properties J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-01 Prathap A., H.S. Bhojya Naik, R. Viswanath, Vishnu G.
In this study, we report the synthesis of Cd-doped SrFeO nanoparticles by biogenic synthesis process using leaf extract. The samples were synthesized by co-precipitation technique. The optical properties of prepared cadmium-doped strontium ferrite (CdSrFeO) nanoparticles were investigated by. SEM, EDS, HRTEM, PL, UV–Visible spectrophotometer, FTIR, and PXRD. PXRD confirmed the cubic and hexagonal structure
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Enhancing the perfection of bulk (1 0 0) β-Ga2O3 crystals grown by Czochralski method J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-26 P.N. Butenko, M.E. Boiko, L.I. Guzilova, V.M. Krymov, S.V. Shapenkov, M.D. Sharkov, V.N. Verbitskii, A.A. Zarichny, V.I. Nikolaev
Gallium Oxide is a prospective ultra-wide band-gap semiconductor for high-voltage electronics. Bulk β-Ga2O3 crystals can be utilized as substrates for device structures. The biggest challenge encountered is to grow low defect density wafers with high crystal perfection. In this work a boule with a diameter of about 20 mm and a height of 20 mm was grown by Czochralski method. The separate plates with
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Review of machine learning applications for crystal growth research J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-26 Kentaro Kutsukake
The application of information science and technology has led to a paradigm shift in scientific and technological research and crystal growth is no exception. Various types of application research have been conducted, and research methods that combine real experiments and simulations with information techniques are becoming increasingly complex. In this paper, I focus on the application of information
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Effect of oxygen-related defects on the performance of seed-end wafers in Ga-doped recharged Czochralski silicon: Thermal donors J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-28 Jie Huang, Ruokai Wu, Huali Zhang, Chen Wang, Dongli Hu, Shuai Yuan, Lei Wang, Deren Yang, Xuegong Yu
Ga-doped recharged Czochralski silicon (Ga-RCZ) is now becoming mainstream in the current photovoltaic market because of the enhanced production efficiency and reduced costs. It also hardly suffers from light-induced degradation (LID) due to the absence of boron-oxygen complexes. However, the performance deterioration of the seed-end wafers universally exists in industrial Ga-RCZ production, even if
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The improvement in heat transfer performance of single crystal silicon carbide with diamond film J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-27 Yulong Zhu, Yuanhao Chen, Li Gou
In order to reduce the temperature of SiC-based electronic power devices during operation, the diamond films of different thickness were grown on 4H-SiC substrates by microwave plasma chemical vapor deposition (MPCVD) method. The thermal conductivity of the composite with 92 μm thick diamond film was measured to be 429.97 W/(m·K) by laser flash method, which is 53.56 % higher than that of individual
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The effect of TiO2 crystalline phase on microstructure and optical features of Zn2TiO4 doped with Mn J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-28 L. Borkovska, K. Kozoriz, I. Vorona, V. Nosenko, O. Gudymenko, C. Labbe, J. Cardin, T. Kryshtab
The influence of crystalline form of TiO2 (rutile and anatase) on microstructure and optical properties of Zn2TiO4 ceramics doped with manganese has been investigated by X-ray diffraction, Scanning electron microscopy, as well as by optical and electron paramagnetic resonance (EPR) methods. The ceramics was produced by sintering in the air at temperatures in the range of 900-1200°C of a mixture of
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Heteroepitaxial growth of a-, m-, and r-plane α-Ga2O3 thin films on rh-ITO electrodes for vertical device applications J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-24 Kazuki Shimazoe, Hiroyuki Nishinaka, Masahiro Yoshimoto
α-Ga2O3 has garnered significant attention as a promising next-generation material for applications in power-switching and deep ultraviolet optoelectronics owing to its ultrawide bandgap. However, fabricating α-Ga2O3-based devices with a vertical structure is challenging because α-Ga2O3 requires heteroepitaxial growth on a heterogeneous substrate, typically insulating sapphire. In this study, we investigated
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A-plane GaN microchannel epitaxy on r-plane sapphire substrate using patterned graphene mask J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-28 Shigeya Naritsuka, Yukio Kato, Masami Nonogaki, Ryoya Yokoi, Kohei Osamura, Yuta Yanase, Takahiro Maruyama
a-plane GaN microchannel epitaxy was performed using a patterned graphene mask. As a result, graphene mask was found useful to grow thin lateral growth because graphene has no vertical bonds. It reduces strain in the laterally grown layer while a large strain is usually produced in conventional heteroepitaxy. Graphene mask could bring a thin MCE layer, which was as thin as 120 nm, in the growth mode
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A direct approach towards synthesis of copper nanofluid by one step solution phase method J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-18 S. Pavan Kumar, U. Sandhya Shenoy, D. Krishna Bhat
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Relationship of single crystal growth and luminescence properties of Cr-doped gadolinium gallium garnet crystals for radiation dose-rate monitoring systems J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-18 Daisuke Matsukura, Shunsuke Kurosawa, Akihiro Yamaji, Yuji Ohashi, Yuui Yokota, Kei Kamada, Hiroki Sato, Satoshi Toyoda, Masao Yoshino, Takashi Hanada, Rikito Murakami, Takahiko Horiai, Akira Yoshikawa
For the decommissioning of Fukushima Daiichi Nuclear Plants, a novel real-time dose-rate monitor consisting of a scintillator, 100-m long optical fiber and CCD spectrometer has been proposed, and this scintillation material is required to have an emission wavelength of longer than approximately 650 nm. In this paper, as a candidate material for the system, we focused on Ce/Cr co-doped Gd3Ga5O12 (Ce/Cr:GGG)
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Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-18 Federico Cesura, Stefano Vichi, Artur Tuktamyshev, Sergio Bietti, Alexey Fedorov, Stefano Sanguinetti, Kanji Iizuka, Shiro Tsukamoto
Dense arrays of self-assembled nanoholes are fabricated in GaAs(100) surfaces by As-free oxide cleaning thermal process. The formation of pit-like structures above 500 °C occurs by congruent evaporation of GaAs in the areas where the oxides have already desorbed. Thermally etched nanoholes exhibit inverted symmetric conical shape with an average depth/base diameter ratio of 0.21. Shallow and deep nanoholes
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Numerical modelling of Cz-β-Ga2O3 crystal growth in reactive atmosphere J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-23 Gagan Kumar Chappa, Vladimir Artemyev, Andrey Smirnov, Detlef Klimm, Natasha Dropka
The present study focuses on computer modeling of Cz- β-Ga2O3 crystal growth while also addressing the issue of minimizing Ir crucible oxidation. To accomplish this objective, a comprehensive framework was developed that combines thermodynamic equilibrium calculations with a CFD numerical model. This integrated approach is designed to simulate the impact of SO2 gas concentration in the chamber atmosphere
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Dislocations/Defects analysis in III-V nitrides - a cost effective MOCVD epitaxy solution J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-16 P.K. Saxena, P. Srivastava, Anshika Srivastava
In present paper an innovative technique to reproduce the epitaxial growth results through lateral flow metal organic chemical vapor deposition (MOCVD) reactor process at atomistic scale is reported. It includes the equivalent MOCVD reactor geometry architecture of AIXTRON 200/4 RF-S horizontal flow reactor. The gas- and surface phase chemical reaction kinetics and thermodynamics are given due consideration
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Fast crystal growth: Nonisothermal phase field predictions versus molecular dynamics data J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-17 P.K. Galenko, N.V. Kropotin
Classic kinetic theories for crystal growth and melting, such as diffusion- or collision-limited theories, encounter challenges in quantitative describing the interface velocity at large values of the driving force. One possible solution of such a crisis of classic theories is seen in using the kinetic phase field model (KPFM) formulated for small and large driving forces on solidification, melting
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Crystal growth and Hall effect of the non-centrosymmetric superconductor α-BiPd and the topological superconductor β-Bi2Pd J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-19 Raja Arumugam, Rosalba Fittipaldi, Anita Guarino, Daniel Mayoh, Alberto Ubaldini, Mariateresa Lettieri, Guerino Avallone, Alfonso Romano, Geetha Balakrishnan, Antonio Vecchione
Due to the rarity of triplet pairing, topological superconductors (SCs) have primarily been realized experimentally in manufactured topological phases, such as heterostructures, where the proximity effect causes triplet pairing with traditional s-wave SCs. Recently, there has been a lot of interest in investigating novel quantum materials with spin-triplet pairs in order to develop Majorana physics
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Crystallization thermodynamic properties and nucleation kinetics of Sr(OH)2·8H2O in an Sr(OH)2·8H2O-H2O system J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-17 Xingwu Zou, Shudong Liang, Yongjuan Zhang, Yanan Wang
There have been few reports in literature on the crystallization thermodynamic properties and nucleation kinetics of strontium hydroxide octahydrate despite their great importance to the reactor design and the regulation of crystal properties. In this work, the crystallization thermodynamic properties of Sr(OH)2·8H2O in pure water were investigated using a dynamic temperature-controlled process and
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Preparation and characterization of anhydrous magnesium carbonate: Effect of different anions of the magnesium sources J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-12 Xuepu Cao, Ruilei Zhang, Hua Zhao, Runjing Liu
The hydrothermal synthesis process for anhydrous magnesium carbonate (MgCO3) from Na2CO3 and three different soluble magnesium sources (MgSO4, MgCl2 and Mg(NO3)2) are investigated. High purity MgCO3 particles are synthesized at the reaction temperature of 160 ℃, the reaction time of 6 h, and the reactant ratio of 1:1 in the three groups of experiments. The effect of different anions of the magnesium
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Impurities related micro-defects in GaSb crystal grown by LEC method J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-14 Jingming Liu, Jun Yang, Jianliang Huang, Guiying Shen, Hui Xie, Fenghua Wang, Youwen Zhao
The epitaxial growth of devices based on gallium antimonide (GaSb) is negatively impacted by defects related to impurities in the crystal. Liquid encapsulated czochralski (LEC) technology was used to grow 2-inch Te-doped GaSb (1 0 0) single crystal ingots, which were then processed into polished wafers in order to investigate the origins and consequences of defects related to impurities. Polished GaSb
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DNA hybrid florescent chrominance sensor: Drug sensing through direct gradient florescent color transformation of hybrid DNA crystals loaded lanthanide (Eu3+/Tb3+) complexes J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-12 Sibo Zhao, Dan Xiu, Min Zhang, Yao Wang, Miao Qiu, Christopher D. Snow, Yanxin Wang, Laurence A. Belfiore, Jianguo Tang
In this study, a highly sensitive anticancer drug sensor was synthesized using DNA crystals loaded with luminescent Ln3+(Eu3+/Tb3+) complexes. The sensors exhibited a pronounced color transformation property due to the differential quenching of Eu3+ and Tb3+ emissions upon drug interactions. These luminescent hybrid DNA crystals present a significant advancement in sensing anticancer drugs like curcumin
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Growth and characterization of AlInN/GaN superlattices J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-11 Haotian Xue, Elia Palmese, Ben J. Sekely, Brian D. Little, Fred A. Kish, John F. Muth, Jonathan J. Wierer
Data are presented on near-lattice-matched Al1-xInxN/GaN superlattices (SLs) with superior morphology to thick AlInN layers. The SLs are grown by metalorganic chemical vapor deposition and consist of ∼ 3 nm thick AlInN, ∼1 nm thick GaN layers, and x=0.153 to 0.203. The SLs are grown with either 20 or 100 periods on GaN-on-sapphire or free-standing GaN substrates. Growth conditions are explored, and
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Bismuth chalcogenide topological insulators crystals grown by the optical floating zone technique J. Cryst. Growth (IF 1.8) Pub Date : 2024-01-10 A. Guarino, R. Arumugam, R. Fittipaldi, M. Lettieri, G. Balakrishnan, A. Vecchione
In this paper, two procedures for the growth of both binary and ternary single crystals of bismuth chalcogenides by optical floating zone technique are described. Detailed characterization has been carried out on a series of samples, i.e. BiSeTe, with x = 0 and 0.9, and BiSbSe, with x = 0 and 0.15, to isolate high quality single crystals, essential for an accurate study of the physical properties of