Tunnel FET (TFET) has potential applications in the next generation ultra-low power transistor to substitute the conventional FETs. It can offer very steep inverse subthreshold swing slope to maintain a low leakage current, thus it can be very essential for limiting power consumption in MOSFETs. The carriers in TFET transport from source to channel by the band-to-band tunneling (BTBT) mechanisms. To realize high saturation currents of TFET, it critically depends on the transmission probability, T_WKB. In indirect semiconductor, such as Si and Ge, the BTBT model is very crucial for designing and predicting the device performance. In this paper, we employed the nonlocal BTBT model applied to three-dimensional Ge-Si heterojunction TFET with gate length 10 nm compare with Si TFET by including quantum effects simulation. The results show that the Ge-Si TFET outperforms Si TFET because of the lower bandgap and larger tunneling windows. BTBT generation rates of Ge-Si TFET are higher than Si TFET in the on-state condition. The highest BTBT generation rates are located in the source and channel junction and its peaks close to the gate dielectric.

中文翻译：

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Ge-Si异质结纳米线隧道FET的分析：带对带隧道模型的隧道窗口的影响

隧道FET（TFET）在下一代超低功率晶体管中具有潜在的应用，以替代传统的FET。它可以提供非常陡峭的反亚阈值摆率，以维持较低的泄漏电流，因此对于限制MOSFET的功耗非常重要。TFET中的载流子通过频带间隧道（BTBT）机制从源向信道传输。要实现TFET的高饱和电流，关键取决于传输概率T _WKB。在诸如Si和Ge的间接半导体中，BTBT模型对于设计和预测器件性能至关重要。在本文中，我们通过包括量子效应模拟，将非局部BTBT模型应用于栅长为10 nm的三维Ge-Si异质结TFET与Si TFET进行比较的非局部BTBT模型。结果表明，由于较低的带隙和较大的隧穿窗口，Ge-Si TFET的性能优于Si TFET。在导通状态下，Ge-Si TFET的BTBT生成速率高于Si TFET。最高BTBT生成速率位于源极和沟道结中，并且其峰值接近栅极电介质。