Phononic crystal, the artificial material, has shown the ability to guide the waves. In this paper, we theoretically and experimentally realize interface transports by doping replacing defects in the acoustic valley insulators. Each cell of the valley insulators has a large resonator and a small resonator. The valley insulators exhibit a complete band gap. The bands are divided into two groups respectively below and above the gap. If the small resonators are replaced by the large resonators, the bands above the gap, will move down and submerge into the valley band gap. If the large resonators are replaced by the small resonator, the bands below the gap, will move up and submerge into the valley band gap. The eigenmodes of the evolving bands show that the acoustic pressure energy is concentrated on the interfaces formed by the replacing defects. The frequency-selective transports can be induced by the band evolution. The replacing defects can be doped everywhere in the bulk, forming various waveguides completely wrapped by the valley insulators. Our works reveal the mechanism of guiding waves by the replacing defects in the acoustic valley insulator. The replacing defects can be doped conveniently and can manipulate the waves flexibly.

人造材料声子晶体显示出引导波的能力。在本文中，我们通过掺杂替换声谷绝缘体中的缺陷，从理论上和实验上实现了界面传输。谷绝缘子的每个单元都有一个大谐振器和一个小谐振器。谷绝缘体表现出完整的带隙。这些带被分为两组，分别位于间隙下方和上方。如果用大谐振器代替小谐振器，则间隙上方的能带将向下移动并淹没到谷带隙中。如果用小谐振器代替大谐振器，则间隙下方的能带将向上移动并淹没到谷带隙中。演变带的本征模式表明声压能量集中在由替换缺陷形成的界面上。频率选择性传输可以由频带演化引起。替换缺陷可以掺杂在块体各处，形成完全被谷绝缘体包裹的各种波导。我们的工作揭示了通过替换声谷绝缘体中的缺陷来引导波的机制。替换缺陷可以方便地掺杂并且可以灵活地操纵波。