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Dominant Kinetic Pathways of Graphene Growth in Chemical Vapor Deposition: The Role of Hydrogen
The Journal of Physical Chemistry C ( IF 3.7 ) Pub Date : 2017-11-14 00:00:00 , DOI: 10.1021/acs.jpcc.7b09622
Pai Li 1 , Zhenyu Li 1 , Jinlong Yang 1
Affiliation  

The most popular way to produce graphene nowadays is chemical vapor deposition, where, surprisingly, H2 gas is routinely supplied even though it is a byproduct itself. In this study, by identifying dominant growing pathways via multiscale simulations, we unambiguously reveal the central role hydrogen played in graphene growth. Hydrogen can saturate the edges of a growing graphene island to some extent, depending on the H2 pressure. Although graphene etching by hydrogen has been observed in experiment, hydrogen saturation actually stabilizes graphene edges by reducing the detachment rates of carbon-containing species. Such a new picture well explains some puzzling experimental observations and is also instrumental in growth protocol optimization for two-dimensional atomic crystal van der Waals epitaxy.

中文翻译:

化学气相沉积中石墨烯生长的主要动力学途径:氢的作用

如今,生产石墨烯的最流行方法是化学气相沉积,令人惊讶的是,尽管H 2气体本​​身是副产物,但仍常规地提供H 2气体。在这项研究中,通过多尺度模拟确定主要的生长途径,我们明确揭示了氢在石墨烯生长中的核心作用。取决于H 2,氢可以在一定程度上使正在生长的石墨烯岛的边缘饱和压力。尽管在实验中观察到了通过氢进行的石墨烯蚀刻,但是氢饱和实际上通过降低含碳物质的脱离速率来稳定石墨烯边缘。这样一张新照片很好地解释了一些令人费解的实验观察,并且在二维原子晶体范德华外延的生长方案优化中也发挥了作用。
更新日期:2017-11-15
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