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Field-dependent, organics assistant filamentary mechanism in both vertical and planar organic memories
Organic Electronics ( IF 3.2 ) Pub Date : 2017-11-03 , DOI: 10.1016/j.orgel.2017.11.004
Qi Zeng , Jiajun Qin , Xiaoqing Chen , Xiaoyuan Hou

The forming/destruction mechanism of conducting filament is essential in understanding the behavior of resistance-memory device. On the basis of filamentary theory, we systematically studied the different electrical performances of both planar and vertical sandwich (metal/organic/metal) memory devices. Bias induced morphological change in gap devices are monitored using scanning electron microscopy system equipped with probes. The in situ images directly demonstrate that with bias increasing, metal clusters emerge inside the channel and further cause sudden switching of device resistance. After clarifying the roles of electrodes and sandwiched organic layer, we conclude a field-dependent filament formation and organics-assistant filament destruction mechanism for resistance memory phenomenon, which should generally exist in all organic electronic devices with metal electrodes.



中文翻译:

垂直和平面有机存储器中依赖于场的有机物辅助丝状机制

导电丝的形成/破坏机理对于理解电阻存储器的性能至关重要。根据丝状理论,我们系统地研究了平面和垂直夹心式(金属/有机/金属)存储设备的不同电性能。使用装备有探针的扫描电子显微镜系统监测间隙设备中的偏压诱导的形态变化。原位图像直接表明,随着偏置的增加,金属簇会出现在通道内部,并进一步引起器件电阻的突然切换。弄清电极和夹在中间的有机层的作用后,我们得出了与电场有关的细丝形成和有机物辅助细丝破坏机理的电阻记忆现象,

更新日期:2017-11-03
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