Abstract Electron donor-acceptor polyimides (PIs) containing different contents of ferrocene (Fc) as the pendent group, were synthesized for electrical resistive memory device applications. The 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) was employed as the electron-withdrawing monomer to condensation polymerize with the flexible 4,4′-diaminodiphenyl ether (4,4′-ODA), And the electron-donating 4,4′-diamino-4″-ferrocenyltriphenylamine (DAFcTPA) designed to bear the triphenylamine (TPA) and Fc groups. Semiconductor parameter analysis indicates that the synthesized PIs containing no less than 5 mol% of Fc, possess nonvolatile flash memory characteristic with excellent operational stability and transient response to applied voltage. The mechanism related to the electrical switching effect was elucidated through molecular simulation.

中文翻译：

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基于带有悬垂二茂铁基团的功能性聚酰亚胺的闪存效应和器件

摘要 包含不同含量的二茂铁 (Fc) 作为侧基的电子供体 - 受体聚酰亚胺 (PI) 被合成用于电阻存储器件应用。以4,4'-(六氟异亚丙基)二邻苯二甲酸酐(6FDA)为吸电子单体，与柔性4,4'-二氨基二苯醚(4,4'-ODA)缩聚，供电子4 ,4'-diamino-4"-ferrocenyltriphenylamine (DAFcTPA) 设计为带有三苯胺 (TPA) 和 Fc 基团。半导体参数分析表明，合成的 PI 含有不少于 5 mol% 的 Fc，具有非易失性闪存特性，具有出色的操作稳定性和对施加电压的瞬态响应。通过分子模拟阐明了与电开关效应相关的机制。