The thermoelectric properties of the composite films of poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) and single-walled carbon nanotube (SWCNT) were investigated with ferric chloride as oxidative dopant. Ferric chloride had a great influence on the enhancement of electrical conductivity and power factor of the composite films. It was found that the doped composite film with an SWCNT content of 50% (F8BT-FeCl₃/50% SWCNT) exhibited a high electrical conductivity of 640.1 S cm⁻¹ at room temperature, which increased fifteen times over the undoped composite film. The power factor of the F8BT-FeCl₃/50% SWCNT composite film was 15.7 μW m⁻¹ K⁻², also higher than that of the undoped composite film. Additionally, in the temperature range of 20–120 °C, the electrical conductivity of the doped composite films decreased and the power factor increased with the increasing temperature, due to the increase of Seebeck coefficient. The carrier transport behavior was demonstrated to obey the fluctuation-induced tunneling model in the F8BT/SWCNT composite film, but was described by the variable range hopping model after doping, indicating the role of oxidative doping in alternating the electrical transport in the composites.

聚（9,9-二dioctylfluorene-的复合薄膜的热电性能ALT -benzothiadiazole）（F8BT）和单壁碳纳米管（SWCNT）与氯化铁作为氧化性掺杂剂进行了研究。氯化铁对提高复合膜的电导率和功率因数有很大的影响。发现SWCNT含量为50％（F8BT-FeCl ₃ /50％SWCNT）的掺杂复合膜在室温下表现出640.1S cm ^-1的高电导率，这比未掺杂复合膜增加了十五倍。F8BT-FeCl ₃ /50％SWCNT复合膜的功率因数为15.7μWm ^-1  K ^-2，也高于未掺杂的复合膜。此外，在20–120°C的温度范围内，由于塞贝克系数的增加，掺杂的复合膜的电导率会降低，功率因数会随温度的升高而增加。在F8BT / SWCNT复合膜中，载流子的传输行为被证明遵循波动诱发的隧穿模型，但是在掺杂后通过可变范围跳变模型进行了描述，表明了氧化掺杂在交替改变复合材料电迁移中的作用。