Two-dimesional (2D) materials have attracted extensive interest due to their excellent electrical, thermal, mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero band gap has limited its applications in electronic devices. Transition metal dichalcogenide (TMDC), another kind of 2D material, has a non-zero direct band gap (same charge carrier momentum in valence and conduction band) at monolayer state, promising for the efficient switching devices (e.g. field effect transistors). This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2D-TMDC materials and also includes an introduction of 2D materials along with the synthesis techniques. Finally, this review describes the possible methodology and future prospective to enhance the charge carrier mobility for electronic devices.

二维（2D）材料由于其出色的电，热，机械和光学特性而引起了广泛的关注。石墨烯一直是研究最多的2D材料之一。然而，其零带隙限制了其在电子设备中的应用。另一种2D材料过渡金属二硫化碳（TMDC）在单层状态下具有非零的直接带隙（价和导带中的电荷载流子动量相同），有望用于高效的开关器件（例如场效应晶体管）。这篇综述主要集中在电荷载流子迁移率的最新进展以及在基于2D-TMDC材料的电子设备中实现高迁移率的挑战，还包括2D材料以及合成技术的介绍。最后，