In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics.

中文翻译：

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可弯曲基板上的硅纳米线比例逆变器

在这项研究中，我们演示了在可弯曲基板上制造的硅纳米线（SiNW）n-金属氧化物半导体（MOS）和p-MOS比例逆变器的性能。可以通过调节负载电压来控制所制造的器件的电特性。然后，在1 V的低电源电压下，n和p-MOS比例逆变器的逻辑摆幅分别为80％和96％。p-MOS比例逆变器的输出电压电平接近轨到轨操作。该装置还具有稳定的特性和良好的疲劳特性。我们的可弯曲SiNW比例逆变器显示出有望成为未来可弯曲电子产品的候选构建基块。