Low dielectric constant (low-k) materials have gained increasing popularity because of their critical role in developing faster, smaller, and higher performance devices. Their practical use has been limited by the strong coupling among mechanical, thermal, and electrical properties of materials and their dielectric constant; a low-k is usually attained by materials that are very porous, which results in high compliance, that is, silica aerogels; high dielectric loss, that is, porous polycrystalline alumina; and poor thermal stability, that is, Sr-based metal–organic frameworks. We report the fabrication of 3D nanoarchitected hollow-beam alumina dielectrics which k is 1.06–1.10 at 1 MHz that is stable over the voltage range of −20 to 20 V and a frequency range of 100 kHz to 10 MHz. This dielectric material can be used in capacitors and is mechanically resilient, with a Young’s modulus of 30 MPa, a yield strength of 1.07 MPa, a nearly full shape recoverability to its original size after >50% compressions, and outstanding thermal stability with a thermal coefficient of dielectric constant (TCK) of 2.43 × 10^–5 K^–1 up to 800 °C. These results suggest that nanoarchitected materials may serve as viable candidates for ultra low-k materials that are simultaneously mechanically resilient and thermally and electrically stable for microelectronics and devices.

中文翻译：

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在刚性，弹性和热稳定的纳米结构材料中同时实现极低的超低介电常数

由于低介电常数（low- k）材料在开发更快，更小和更高性能的器件中起着至关重要的作用，因此它们越来越受到人们的欢迎。由于材料的机械，热和电特性与其介电常数之间的强耦合，限制了它们的实际使用。通常通过多孔性极高的材料（即二氧化硅气凝胶）可达到低k值；高介电损耗，即多孔多晶氧化铝；热稳定性差，即基于Sr的金属有机框架。我们报告三维的制造nanoarchitected空心梁氧化铝介质，其ķ在1 MHz下为1.06-1.10，在-20至20 V的电压范围和100 kHz至10 MHz的频率范围内稳定。这种介电材料可用于电容器，并且具有机械弹性，杨氏模量为30 MPa，屈服强度为1.07 MPa，在> 50％的压缩后几乎恢复到其原始尺寸的形状，并具有出色的热稳定性和热稳定性。高达800°C的介电常数（TCK）系数为2.43×10 ^–5 K ^–1。这些结果表明，纳米结构化的材料可以用作超低k材料的可行候选材料，而超低k材料对于微电子学和器件同时具有机械弹性，热和电稳定性。