Quantum emitters in layered hexagonal boron nitride (hBN) have recently attracted a great deal of attention as promising single photon sources. In this work, we demonstrate resonant excitation of a single defect center in hBN, one of the most important prerequisites for employment of optical sources in quantum information processing applications. We observe spectral line widths of an hBN emitter narrower than 1 GHz while the emitter experiences spectral diffusion. Temporal photoluminescence measurements reveal an average spectral diffusion time of around 100 ms. An on-resonance photon antibunching measurement is also realized. Our results shed light on the potential use of quantum emitters from hBN in nanophotonics and quantum information processing applications.

中文翻译：

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六方氮化硼中量子发射体的共振激发。

层状六方氮化硼（hBN）中的量子发射器作为有前途的单光子源，最近引起了广泛的关注。在这项工作中，我们证明了hBN中单个缺陷中心的共振激发，这是在量子信息处理应用中使用光源的最重要先决条件之一。当发射器经历频谱扩散时，我们观察到hBN发射器的谱线宽度窄于1 GHz。时间光致发光测量显示平均光谱扩散时间约为100毫秒。还实现了共振光子反聚束测量。我们的研究结果揭示了hBN量子发射体在纳米光子学和量子信息处理应用中的潜在用途。