In article number 1701726, by Hui Wang and co‐workers, a silicon‐nanowire modified metal‐semiconductor nanostructure is fabricated to induce a large lateral photovoltaic effect (LPE). The increased sensitivity of LPE is beneficial to high‐performance position‐sensitive photodetectors. The strong localized surface plasmons (LSPs) supported by silver nanoparticles contributed to the enhancement of light trapping and photo‐induced carrier generation. These novel LSPs propelled methods expand excellent application prospects of photoelectric devices.

中文翻译：

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光电探测器：硅纳米线改性的Ag / Si中的局部表面等离激元诱导的位置敏感光电探测（Small 41/2017）

Wang Hui及其同事在编号为1701726的文章中，制造了硅纳米线改性的金属半导体纳米结构，以引起较大的横向光伏效应（LPE）。LPE灵敏度的提高有利于高性能的位置敏感型光电探测器。银纳米颗粒支撑的强局部表面等离子体激元（LSP）有助于增强光捕获和光诱导的载流子生成。这些新颖的LSPs推动方法拓展了光电器件的优异应用前景。