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Junction model and transport mechanism in hybrid PEDOT:PSS/n-GaAs solar cells
Organic Electronics ( IF 3.2 ) Pub Date : 2017-09-28 , DOI: 10.1016/j.orgel.2017.09.044
Kai-Fu Chang , Ying-Chou Chen , Kai Wen Chang , Muthaiah Shellaiah , Kien Wen Sun

This study investigates the junction formation and interface properties of PEDOT:PSS/n-GaAs hybrid solar cells on planar GaAs substrates. Barrier height, photocurrent, dark saturation current and build-in potential at this hybrid interface are measured by varying n-GaAs doping concentrations. The work function and valence band edge of the polymer are extracted from ultraviolet photoelectron spectroscopy to construct the band diagram of the hybrid n-GaAs/PEDOT:PSS junction. The current-voltage characteristics were analyzed by using abrupt (p+n) junction and Schottky junction models. Contrary to the earlier results from the PEDOT:PSS/n-Si solar cells, the experimental evidence clearly suggested that the interface between n-GaAs and PEDOT:PSS more likely exhibited a Schottky type instead of a p+n junction. The current transport is governed by the thermionic emission of majority carriers over a barrier and not by diffusion. The dark saturation current density increases markedly owing to the increasing surface recombination rate in heavier n-doped GaAs substrates, leading to significant deterioration in solar cells performance.



中文翻译:

混合PEDOT:PSS / n-GaAs太阳能电池的结模型和输运机理

这项研究调查了平面GaAs衬底上PEDOT:PSS / n-GaAs混合太阳能电池的结形成和界面特性。通过改变n-GaAs掺杂浓度来测量该混合界面处的势垒高度,光电流,暗饱和电流和内建电势。从紫外光电子能谱中提取聚合物的功函数和价带边缘,以构建n-GaAs / PEDOT:PSS杂化结的能带图。使用突变(p + n)结和肖特基结模型分析了电流-电压特性。与PEDOT:PSS / n-Si太阳能电池的早期结果相反,实验证据清楚地表明,n-GaAs和PEDOT:PSS之间的界面更可能表现出肖特基类型而不是ap +n结。电流的传输是由势垒上方多数载流子的热电子发射决定的,而不是受扩散控制的。由于较重的n掺杂GaAs衬底中表面复合率的提高,暗饱和电流密度显着增加,从而导致太阳能电池性能的显着下降。

更新日期:2017-09-28
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