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Engineering two-dimensional electronics by semiconductor defects
Nano Today ( IF 17.4 ) Pub Date : 2017-10-01 , DOI: 10.1016/j.nantod.2017.07.001
Dan Wang , Xian-Bin Li , Dong Han , Wei Quan Tian , Hong-Bo Sun

Abstract Two-dimensional (2D) semiconductors have attracted considerable attentions from electronic-engineering community due to their unique electronic properties. Especially, the inherent advantage of scaling semiconductor into atomic thickness has raised the prospect of possible extension of the Moore’s law. To achieve 2D electronics, a full comprehension of semiconductor defect physics and chemistry is indispensable due to its controlling electrical performance of 2D materials and functionalizing their devices. In this review, first we explain why 2D semiconductors is important for nanoelectronics and optoelectronics. Second, we elucidate how native defects or intentional impurities affect and control electrical characteristic in 2D semiconductors, such as carrier concentration and their conductive type. In this section, experimental pictures of defects and several updated theoretical methods to evaluate carrier ionization energies of defects and their conductive type are introduced in detail. Third, typical device experiments are shown to demonstrate a direct role of defects to functionalize 2D electronic device. Furthermore, a database of popular defects and their electrical properties in current popular 2D semiconductors is summarized for references. Last, we discuss the challenges and potential prospects of defect engineering for 2D devices. The present paper offers important viewpoints from semiconductor defects to design the emerging 2D electronics.

中文翻译:

通过半导体缺陷设计二维电子学

摘要 二维 (2D) 半导体由于其独特的电子特性引起了电子工程界的广泛关注。尤其是将半导体缩小到原子厚度的先天优势,为摩尔定律的可能延伸提供了前景。为了实现二维电子学,半导体缺陷物理和化学的全面理解是必不可少的,因为它可以控制二维材料的电气性能并使其设备功能化。在这篇综述中,我们首先解释为什么二维半导体对纳米电子学和光电子学很重要。其次,我们阐明了原生缺陷或故意杂质如何影响和控制二维半导体的电气特性,例如载流子浓度及其导电类型。在这个部分,详细介绍了缺陷的实验图片和几种评估缺陷载流子电离能及其导电类型的更新理论方法。第三,典型的设备实验证明了缺陷对二维电子设备功能化的直接作用。此外,还总结了当前流行的二维半导体中流行的缺陷及其电气特性的数据库,以供参考。最后,我们讨论了二维设备缺陷工程的挑战和潜在前景。本文提供了从半导体缺陷设计新兴二维电子产品的重要观点。典型的设备实验证明了缺陷对二维电子设备功能化的直接作用。此外,还总结了当前流行的二维半导体中流行的缺陷及其电气特性的数据库,以供参考。最后,我们讨论了二维设备缺陷工程的挑战和潜在前景。本文提供了从半导体缺陷设计新兴二维电子产品的重要观点。典型的设备实验证明了缺陷对二维电子设备功能化的直接作用。此外,还总结了当前流行的二维半导体中流行的缺陷及其电气特性的数据库,以供参考。最后,我们讨论了二维设备缺陷工程的挑战和潜在前景。本文提供了从半导体缺陷设计新兴二维电子产品的重要观点。
更新日期:2017-10-01
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