The growth of anatase TiO₂ nanowires (NWs) on fluorine doped tin oxide (FTO) substrates through hydrothermal reaction has attracted wide attention and research, especially in the case of the solar cells. Actually, the built-in electric field at the anatase TiO₂ NWs/FTO interface leads to the photoexcited holes transfer to FTO conductive substrates because the Fermi energy of anatase TiO₂ NWs film is higher than that of FTO substrates. Yet efficient transport of photoexcited electron to the FTO conductive substrates is desirable. Hence, the built-in electric field at the pure TiO₂ NWs/FTO interface has prevented anatase TiO₂ NWs-based solar cells from achieving a higher photoelectric performance. In this work, we elaborately design and construct the N-doped anatase TiO₂ NWs/FTO interface with the desirable orientations from FTO toward N-doped anatase TiO₂ NWs, which favors the photoexcited electron transfer to the FTO conductive substrates. The surface photovoltage (SPV) and Kelvin probe measurements demostrate that the N-doped anatase TiO₂ NWs/FTO interface favors the photoexcited electron transfer to the FTO conductive substrates due to the fact that the orientation of the built-in electric field at the N-doped TiO₂ NWs/FTO interface is from FTO toward TiO₂. The photoexcited charge transfer dynamics of CdS QD-sensitized TiO₂ NWs and N-doped TiO₂ NWs electrodes was investigated using the transient photovoltage (TPV) and transient photocurrent (TPC) technique. Benefiting from the desirable interface electric field, CdS-based quantum dot-sensitized solar cells (QDSCs) with the optimal N doping amount exhibit a remarkable solar energy conversion efficiency of 2.75% under 1 sun illumination, which is 1.46 times enhancement as compared to the undoped reference solar cells. The results reveal that the N-doped anatase TiO₂ NWs electrodes have promising applications in solar cells.

中文翻译：

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N掺杂锐钛矿型TiO ₂纳米线改善TiO ₂与FTO界面之间的电子转移及其在量子点敏化太阳能电池中的应用

通过水热反应在氟掺杂氧化锡（FTO）衬底上生长锐钛矿TiO ₂纳米线（NWs）引起了广泛的关注和研究，尤其是在太阳能电池的情况下。实际上，由于锐钛矿型TiO ₂ NWs薄膜的费米能量高于FTO基板，因此锐钛矿型TiO ₂ NWs / FTO界面处的内置电场导致光激发空穴转移至FTO导电基板。仍然需要将光激发电子有效地传输到FTO导电基板。因此，纯TiO ₂ NWs / FTO界面处的内置电场阻止了锐钛矿型TiO _{2的产生。}基于NWs的太阳能电池实现了更高的光电性能。在这项工作中，我们精心设计和构建了N掺杂的锐钛矿型TiO ₂ NWs / FTO界面，具有从FTO朝向N掺杂的锐钛矿型TiO ₂ NWs的理想取向，这有利于光激发电子转移至FTO导电基板。表面光电压（SPV）和开尔文（Kelvin）探针测量表明，由于N处内置电场的取向，N掺杂的锐钛矿TiO ₂ NWs / FTO界面有利于光激发电子转移至FTO导电衬底掺杂的TiO ₂ NWs / FTO界面是从FTO到TiO ₂。CdS QD敏化TiO的光激发电荷转移动力学使用瞬态光电压（TPV）和瞬态光电流（TPC）技术研究了_2个NWs和N掺杂的TiO ₂ NWs电极。得益于理想的界面电场，具有最佳N掺杂量的CdS基量子点敏化太阳能电池（QDSC）在1个太阳光照射下显示了2.75％的显着太阳能转换效率，与之相比，提高了1.46倍。未掺杂的参考太阳能电池。结果表明，N掺杂的锐钛矿型TiO ₂ NWs电极在太阳能电池中具有广阔的应用前景。