Effectively controlling photoinduced charge transport at the heterointerface is of crucial importance for improving the performance of photovoltaic devices. On the basis of an ipsilateral selective electron tunneling (ISET) mechanism, here this study investigates photoinduced charge transport and photovoltaic conversion at a simplified dye/single‐layer graphene (SLG)/TiO₂ ternary interface. With an amphiphilic Z907 molecule as the model dye, the photoexcited electrons in the dye can directly tunnel across SLG and be collected by the TiO₂ layer with an efficiency of 96.23%, which guarantees a high‐efficiency photoelectric conversion at the ISET‐based heterointerface. More importantly, the intrinsic Schottky barrier and fast hole collection rate at the heterointerface lead to a high photovoltage, a large fill factor, and the good intense‐light performance for photovoltaic conversion. Such an ISET‐based heterointerface may offer a platform of designing and developing a novel class of photovoltaic devices with high efficiency.

中文翻译：

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选择性电子隧穿异质界面的高效光伏转换

有效地控制异质界面处的光感应电荷传输对于提高光伏器件的性能至关重要。在同侧选择性电子隧穿（ISET）机制的基础上，本研究在简化的染料/单层石墨烯（SLG）/ TiO ₂三元界面上研究了光诱导的电荷传输和光电转换。使用两亲性Z907分子作为模型染料，该染料中的光激发电子可以直接穿过SLG隧穿并被TiO ₂收集层的效率为96.23％，这确保了基于ISET的异质界面的高效光电转换。更重要的是，固有的肖特基势垒和异质界面处的快速空穴收集速率可导致较高的光电压，较大的填充系数以及用于光电转换的良好的强光性能。这样的基于ISET的异质接口可以提供一个平台，用于高效设计和开发新型光伏设备。