We introduce an organometal halide perovskite (CH₃NH₃PbI₃), as a hole injection layer (HIL) to accelerate hole injection and transport in tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes (OLEDs). The excellent charge mobility of CH₃NH₃PbI₃ along with the better interface contacts induced by the CH₃NH₃PbI₃ HIL improved the charge balance and thus enhanced device performance compared with that of OLEDs without a HIL and with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) HIL. Maximum luminance of 19110 cd m⁻² and power efficiency of 3.210 lm W⁻¹ were obtained. Also, besides more balanced charge recombination, the non-aqueous fabrication of the perovskite HIL and the chemical stability of indium tin oxide in contact with CH₃NH₃PbI₃ led to increased device stability and durability, giving a half-life time as long as 31.7 h.

我们引入一种有机金属卤化物钙钛矿（CH ₃ NH ₃ PbI ₃），作为空穴注入层（HIL），以加速空穴注入并在三（8-羟基喹啉）铝基有机发光二极管（OLED）中传输。CH ₃ NH ₃ PbI ₃的优异电荷迁移率，以及由CH ₃ NH ₃ PbI ₃ HIL诱导的更好的界面接触，与不带HIL和聚（3）的OLED相比，改善了电荷平衡，从而提高了器件性能。 ，4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）HIL。最大亮度为19110 cd m ^-2，功率效率为3.210 lm W获得^-1。此外，除了更平衡的电荷重组外，钙钛矿HIL的非水制备以及与CH ₃ NH ₃ PbI ₃接触的氧化铟锡的化学稳定性还提高了器件的稳定性和耐用性，从而使半衰期延长31.7小时