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Structurally Engineered Nanoporous Ta2O5–x Selector-Less Memristor for High Uniformity and Low Power Consumption
ACS Applied Materials & Interfaces ( IF 9.5 ) Pub Date : 2017-09-19 00:00:00 , DOI: 10.1021/acsami.7b06918
Soonbang Kwon 1 , Tae-Wook Kim 2 , Seonghoon Jang 1 , Jae-Hwang Lee 3 , Nam Dong Kim 2, 4 , Yongsung Ji 4 , Chul-Ho Lee 1 , James M. Tour 4 , Gunuk Wang 1
Affiliation  

A memristor architecture based on metal-oxide materials would have great promise in achieving exceptional energy efficiency and higher scalability in next-generation electronic memory systems. Here, we propose a facile method for fabricating selector-less memristor arrays using an engineered nanoporous Ta2O5–x architecture. The device was fabricated in the form of crossbar arrays, and it functions as a switchable rectifier with a self-embedded nonlinear switching behavior and ultralow power consumption (∼2.7 × 10–6 W), which results in effective suppression of crosstalk interference. In addition, we determined that the essential switching elements, such as the programming power, the sneak current, the nonlinearity value, and the device-to-device uniformity, could be enhanced by in-depth structural engineering of the pores in the Ta2O5–x layer. Our results, on the basis of the structural engineering of metal-oxide materials, could provide an attractive approach for fabricating simple and cost-efficient memristor arrays with acceptable device uniformity and low power consumption without the need for additional addressing selectors.

中文翻译:

结构工程化的纳米多孔Ta 2 O 5– x选择器较少的忆阻器,具有高均匀性和低功耗

基于金属氧化物材料的忆阻器架构有望在下一代电子存储系统中实现出色的能源效率和更高的可扩展性。在这里,我们提出了一种使用工程化的纳米多孔Ta 2 O 5– x结构制造无选择忆阻器阵列的简便方法。该器件以交叉开关阵列的形式制造,具有可嵌入的非线性开关特性和超低功耗(〜2.7×10 –6)的可开关整流器的功能。W),从而有效地抑制了串扰。此外,我们确定,通过深度结构工程Ta 2中的孔,可以增强基本的开关元件,例如编程能力,潜电流,非线性值和器件之间的均匀性。O 5– x层。基于金属氧化物材料的结构工程,我们的结果可以提供一种有吸引力的方法,用于制造简单且具有成本效益的忆阻器阵列,具有可接受的器件均匀性和低功耗,而无需其他寻址选择器。
更新日期:2017-09-20
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