Abstract The influence of oxygen partial pressure on epitaxy is systematically studied in La 2 Zr 2 O 7 (LZO) thin films fabricated by metal organic deposition (MOD) on yttria stabilized zirconia (00 l ) single crystal substrates. The results show that oxygen partial pressure affects not only the epitaxial growth but also the morphology evolution of film. It is observed that the texture sharpness of LZO film improves while its surface flatness becomes worse with increasing oxygen partial pressure during the whole heat-treatment process. Further studies illustrate that high oxygen partial pressure at pyrolysis step favors the texture sharpening of LZO film, which is contributed to the complete decomposition of organic constitution and the decrease of residual carbon in oxide film. However, low oxygen partial pressure at crystalline step helps the improvement of surface flatness for LZO thin film. It is supposed to be linked with the decrease of oxygen vacancy defects and the increase of grain size along with the replenishment of oxygen content at the crystallization stage. Tailoring oxygen partial pressure at separate heat-treatment steps is important to improving texture sharpness and surface flatness of LZO buffer film as long as the oxidation of metallic substrate can be avoided in coated conductors.

中文翻译：

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单独热处理步骤采用的氧分压对LZO薄膜外延的影响

摘要 在氧化钇稳定的氧化锆 (00 l ) 单晶衬底上通过金属有机沉积 (MOD) 制备的 La 2 Zr 2 O 7 (LZO) 薄膜系统地研究了氧分压对外延的影响。结果表明，氧分压不仅影响外延生长，而且影响薄膜的形貌演变。观察到，在整个热处理过程中，随着氧分压的增加，LZO薄膜的织构锐度提高，而其表面平整度变差。进一步的研究表明，热解步骤的高氧分压有利于 LZO 膜的织构锐化，这有助于有机成分的完全分解和氧化膜中残留碳的减少。然而，结晶阶段的低氧分压有助于提高 LZO 薄膜的表面平整度。推测这与结晶阶段氧空位缺陷的减少和晶粒尺寸的增加以及氧含量的补充有关。在单独的热处理步骤中调整氧分压对于提高 LZO 缓冲膜的纹理锐度和表面平整度很重要，只要可以避免涂层导体中金属基材的氧化。