当前位置: X-MOL 学术J. Eur. Ceram. Soc. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Synthesis and electrical properties of lead-free piezoelectric Bi0.5Na0.5TiO3 thin films prepared by Sol-Gel method
Journal of the European Ceramic Society ( IF 5.7 ) Pub Date : 2017-09-18 , DOI: 10.1016/j.jeurceramsoc.2017.06.019
S. Abou Dargham , F. Ponchel , N. Abboud , M. Soueidan , A. Ferri , R. Desfeux , J. Assaad , D. Remiens , D. Zaouk

Lead-free Bi0.5Na0.5TiO3 (BNT) piezoelectric thin films were deposited on Pt/TiOx/SiO2/Si substrates by Sol-Gel method. A dense and well crystallized thin film with a perovskite phase was obtained by annealing the film at 700 °C in a rapid thermal processing system. The relative dielectric constant and loss tangent at 12 kHz, of BNT thin film with 350 nm thickness, were 425 and 0.07, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 9 μC/cm2 and a coercive field of 90 kV/cm. Piezoelectric measurements at the macroscopic level were also performed: a piezoelectric coefficient (d33effmax) of 47 pm/V at E = 190 kV/cm was obtained. The piezoresponse force microscopy data confirmed that BNT thin films present ferroelectric and piezoelectric behavior at the nanoscale level.



中文翻译:

Sol-Gel法制备无铅压电Bi 0.5 Na 0.5 TiO 3薄膜及其电性能

采用Sol-Gel法在Pt / TiO x / SiO 2 / Si衬底上沉积无铅Bi 0.5 Na 0.5 TiO 3(BNT)压电薄膜。通过在快速热处理系统中将膜在700°C下退火,可以得到具有钙钛矿相的致密且结晶良好的薄膜。厚度为350 nm的BNT薄膜的相对介电常数和在12 kHz时的损耗角正切分别为425和0.07。铁电磁滞的测定结果是残留极化值为9μC/ cm 2,矫顽场为90kV / cm。还进行了宏观的压电测量:压电系数(d 33effmax在E = 190 kV / cm时获得47 pm / V的电导率)。压电响应力显微镜数据证实,BNT薄膜在纳米级呈现出铁电和压电行为。

更新日期:2017-09-18
down
wechat
bug