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Generation of Schrödinger cat type states in a planar semiconductor heterostructure
Physical Review B ( IF 3.7 ) Pub Date : 2017-09-18 00:00:00 , DOI: 10.1103/physrevb.96.115308
J. Pawłowski , M. Górski , G. Skowron , S. Bednarek

We propose a nanodevice based on a typical planar semiconductor heterostructure with lateral confinement potential created by voltages applied to local gates. We show how to obtain near parabolical confinement along the nanodevice, and how to use coherent states of the harmonic oscillator for spatial separation of electron densities corresponding to opposite spin directions. In such a way, an entangled state of Schrödinger's cat type is created. We have performed simulations of a realistic nanodevice model by numerically solving the time-dependent Schrödinger equation together with simultaneous tracking of the controllable confinement potential via solution of the Poisson's equation at every time step.

中文翻译:

平面半导体异质结构中Schrödinger猫型态的产生

我们提出了一种基于典型的平面半导体异质结构的纳米器件,该器件具有通过施加到局部栅极的电压产生的横向限制电位。我们展示了如何沿着纳米器件获得接近抛物线的禁闭,以及如何使用谐波振荡器的相干态对与相反的自旋方向相对应的电子密度进行空间分离。以这种方式,创建了薛定ding猫类型的纠缠状态。我们通过数值求解时间相关的Schrödinger方程,并通过在每个时间步通过泊松方程的求解同时跟踪可控的约束电位,对真实的纳米器件模型进行了仿真。
更新日期:2017-09-19
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