Reduced graphene oxides (rGO) are synthesized via reduction of GO with reducing agents as a hole‐extraction layer for high‐performance inverted planar heterojunction perovskite solar cells. The best efficiencies of power conversion (PCE) of these rGO cells exceed 16%, much greater than those made of GO and poly(3,4‐ethenedioxythiophene):poly(styrenesulfonate) films. A flexible rGO device shows PCE 13.8% and maintains 70% of its initial performance over 150 bending cycles. It is found that the hole‐extraction period is much smaller for the GO/methylammonium lead‐iodide perovskite (PSK) film than for the other rGO/PSK films, which contradicts their device performances. Photoluminescence and transient photoelectric decays are measured and control experiments are performed to prove that the reduction of the oxygen‐containing groups in GO significantly decreases the ability of hole extraction from PSK to rGO and also retards the charge recombination at the rGO/PSK interface. When the hole injection from PSK to GO occurs rapidly, hole propagation from GO to the indium‐doped tin oxide (ITO) substrate becomes a bottleneck to overcome, which leads to a rapid charge recombination that decreases the performance of the GO device relative to the rGO device.

中文翻译：

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石墨烯氧化物（GO）和还原石墨烯氧化物（rGO）薄膜的反常电荷提取行为，作为高性能钙钛矿太阳能电池的高效p接触层

还原型石墨烯氧化物（rGO）是通过用还原剂将GO还原而合成的，作为高性能倒置平面异质结钙钛矿太阳能电池的空穴提取层。这些rGO电池的最佳功率转换（PCE）效率超过16％，远高于GO和聚（3,4-乙二氧基噻吩）：聚（苯乙烯磺酸盐）薄膜制成的功率转换效率。灵活的rGO设备显示PCE为13.8％，并在150个弯曲周期内保持其初始性能的70％。发现GO /甲基铵碘化铅钙钛矿（PSK）膜的空穴提取周期比其他rGO / PSK膜的空穴提取周期小得多，这与它们的器件性能相矛盾。测量了光致发光和瞬态光电衰减，并进行了控制实验，以证明GO中含氧基团的还原显着降低了从PSK到rGO的空穴提取能力，并且还阻碍了rGO / PSK界面处的电荷重组。当从PSK到GO的空穴注入迅速发生时，从GO到铟掺杂的氧化锡（ITO）衬底的空穴传播成为要克服的瓶颈，这导致快速的电荷复合，从而降低了GO器件相对于GO器件的性能。 rGO设备。