Manipulation of nanostructures is difficult, making it tough to fabricate nano-device, let alone the fabrication of integrated nano-sensor. In this paper, a monolithically integrated H₂ nano-sensor array on a GaN honeycomb nanonetwork (GaN-HN) are proposed and realized by combining GaN-HN MBE growth with standard silicon micromachining techniques. For each H₂ nano-sensor unit, a H₂ sensing element, a reference sensor, a micro-heater, a resistive temperature detector (RTD), and the current-circuit are integrated on a single chip. The H₂ sensing element Pt/GaN-HN Schottky diode was well fabricated on the suspended GaN-HN with 20 nm out-of-plane deformation and 0.0016 mm⁻¹ curvature. An Au/GaN-HN Schottky diode is proposed as the reference sensor and it is effective to reduce the output signal shift caused by ambient fluctuation to 20%. Moreover, the micro-heater on the free standing GaN-HN has high heating efficiency with fast heating and cooling time (2.3 ms and 2.5 ms, respectively). In addition, the performance of H₂ nano-sensor unit at room temperature and at 75 °C heated by the integrated micro-heater with low power of 5.8 mW was recorded and discussed. At 75 °C, the response time τ_res and the recovery time τ_rec of the integrated H₂ sensor are significantly shortened by a factor of 3.

纳米结构的操作很困难，这使得很难制造纳米器件，更不用说集成纳米传感器的制造了。在本文中，提出并通过将GaN-HN MBE生长与标准硅微加工技术相结合，实现了在GaN蜂窝纳米网络（GaN-HN）上的单片集成H ₂纳米传感器阵列。对于每个H ₂纳米传感器单元，将H ₂传感元件，参考传感器，微型加热器，电阻温度检测器（RTD）和电流电路集成在单个芯片上。H ₂感测元件Pt / GaN-HN肖特基二极管在悬浮的GaN-HN上制作得很好，具有20 nm的面外变形和0.0016 mm ^-1曲率。提出了一种Au / GaN-HN肖特基二极管作为参考传感器，它可以有效地将环境波动引起的输出信号偏移降低到20％。此外，独立式GaN-HN上的微加热器具有很高的加热效率，并且具有快速的加热和冷却时间（分别为2.3 ms和2.5 ms）。此外，记录并讨论了H ₂纳米传感器单元在室温和75°C下由集成微型加热器以5.8 mW的低功率加热的性能。在75°C时，集成式H ₂传感器的响应时间_τres和恢复时间_τrec大大缩短了3倍。