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Anthracene-assisted inverse transport growth and superconductivity at 3.3 K in unsupported ultrathin {110} Nb and {0001} NbSe2 nanoplates
Journal of Materials Chemistry C ( IF 6.4 ) Pub Date : 2017-09-11 00:00:00 , DOI: 10.1039/c7tc03736h
Jian-Min Li 1, 2, 3, 4 , Jie Fang 1, 2, 3, 4
Affiliation  

An anthracene vapor-assisted inverse transport growth mechanism of unsupported ultrathin two-dimensional (2D) superconducting single-crystal niobium (Nb) and niobium diselenide (NbSe2) nanoplates (thickness ∼2.5 nm) using anthracene and NbSe2 powders as precursors is reported. Besides the whisker-like counterparts, the anthracene vapor hierarchical invasion into NbSe2 leads to 2D Nb nanoplates with a {110} surface and 2D few-layered {0001} NbSe2 nanoplates grown in the high-temperature residual region, while sub-millimeter selenium whiskers are found in the low-temperature transporting region. Direct magnetization measurements demonstrated that superconductivity at ∼3.3 K was clearly observed in the unsupported ultrathin Nb and NbSe2 nanoplates. These findings may offer a new way to produce freestanding single-crystal 2D superconductors and elemental 2D metallic nanoplates.

中文翻译:

在不受支持的超薄{110} Nb和{0001} NbSe 2纳米板上,蒽助于3.3 K的逆向传输增长和超导性

报道了以蒽和NbSe 2粉末为前体的无支撑的超薄二维(2D)超导单晶铌(Nb)和二硒化铌(NbSe 2)纳米板(厚度约2.5 nm)的蒽蒸气辅助逆传输生长机理。。除了类似晶须的晶状体,蒽蒸气分层侵入NbSe 2还导致2D Nb纳米板具有{110}表面,而2D几层{0001} NbSe 2纳米板则在高温残留区域中生长,而亚毫米级在低温运输区域发现了硒晶须。直接磁化测量表明,在无支撑的超薄Nb和NbSe中清楚地观察到在约3.3 K处的超导性2个纳米板。这些发现可能为生产独立的单晶2D超导体和元素2D金属纳米板提供了一种新方法。
更新日期:2017-09-18
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